Energy band structure, acoustic velocities, optical phonon frequencies and mechanical properties of InP1-xSbx alloys under temperature and pressure

Elkenany, Elkenany B.

doi:10.1016/j.infrared.2021.103720

Cited by 27 publications

(12 citation statements)

References 39 publications

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“…It is seen that the bowing parameters are decreased with enhancing pressure from 0 to 120 kbar as shown in Eqs. (6)(7)(8)(9)(10)(11). The energy bandgaps at p = 0 kbar for GaAs 1-x N x alloy at x = 0 (GaAs) and at x = 1 (GaN) are E L = 1.75 eV, E Г = 1.42 eV, E X = 1.82 eV, E L = 6.25 eV, E Г = 3.20 eV, and E X = 4.61 eV, respectively.…”

Section: Rults and Discussionmentioning

confidence: 96%

“…Due to the possibility of a sudden change in atom arrangement under applied pressure, the characteristics of high-pressure phases may differ significantly from those under normal conditions [9]. The effect of pressure on the electronic, optical, mechanical properties, phonon frequencies, and sound velocity of the semiconductor alloys has been studied by several authors [10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy

Maaitah

Elkenany

2022

J Comput Electron

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We investigated the electronic, phonon frequencies, and sound velocity of GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the entire nitrogen concentration range (with x from 0 to 1) using the empirical pseudo-potential model within the virtual crystal approximation including the compositional disorder effect. The pressure-dependent electronic, phonon frequencies and sound velocity of GaAs1-xNx ternary alloy have been studied. Our findings and the existing experimental data are found to be in good agreement. According to the dependence on pressure, a rising bandgap is predicted for GaAs1-xNx alloys at high-pressure values. According to the findings of this study, the GaAs1-xNx characteristics could have substantial optoelectronic applications in the infrared and mid-infrared spectral ranges.

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Section: Rults and Discussionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy

Maaitah

Elkenany

2022

J Comput Electron

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“…Using the EPM technique [23][24][25], in which the symmetric and anti-symmetric pseudo-potential form factors have been adjusted to fit the experimental band gap energies of parent compounds of the studied alloy, namely InP, InAs, and InSb at selected high symmetry points (Γ, X, L) in the first Brillouin zone. In this work, some of the optical, mechanical, and thermal properties of the quaternary alloy InP x As y Sb 1-x-y lattice-matched to InAs as a substrate have been calculated.…”

Section: Theory and Calculationmentioning

confidence: 99%

Response of mechanical and optoelectronic properties for InPxAsySb1–x–y/InAs system to composition

Degheidy

Abuali

Elkenany

2022

J. Korean Phys. Soc.

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The compositional dependence of optical, mechanical, thermal properties, and lattice vibrations of InPxAsySb1–x–y quaternary semiconductor alloys lattice-matched to InAs substrate has been studied. In this study, the physical properties of the binary elements InAs, InSb, and InP that make up the quaternary alloy were employed. Under the virtual crystal approximation (VCA), the empirical pseudo-potential model (EPM) was used to carry out the research. Our findings are in good agreement with the available experimental and theoretical values. In the literature, the composition effect on the optical, mechanical and thermal properties of the InPxAsySb1–x–y/InAs system has not been thoroughly investigated. As a result, we focused on these properties as a function of composition.

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“…Numerous methods have been utilized to study the band-structure of semiconductors; among them is the so-called EPM (Chelikowsky and Cohen 1976;Degheidy et al , 2021Elkenany 2021aElkenany , 2021bElkenany , 2021cPandey and Phillips 1974). The temperature and pressure dependence of the physical properties for the alloys have been recorded theoretically and experimentally by several works (Chen and Ravindra 2012;Degheidy et al 2013Degheidy and Elkenany 2015a, 2015b, 2016Elkenany 2015;Al Maaitah and Elkenany 2022;Othman 2020bOthman , 2020aSaib et al 2008;Sherzad Othman et al 2021;Wang et al 2012;Yang et al 2021).…”

Section: Introductionmentioning

confidence: 99%

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1−x−y/InAs quaternary semiconductor system

2022

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The temperature dependence of acoustic velocities, thermal properties, phonon frequencies, mechanical, electronic, and optical properties for the InPxAsySb1−x−y/InAs system has been studied. The physical properties of the binary components InSb, InP, and InAs that constitute the quaternary alloy were used in this research. The study has been done using the empirical pseudo-potential method (EPM) under the virtual crystal approximation (VCA). The thermal properties, phonon frequencies, and acoustic velocities for the InPxAsySb1−x−y/InAs system under the effect of temperature have not been fully studied. Therefore, we have focused on these properties under the influence of temperature. Due to the lack of published theoretical and experimental values on these properties, our findings will provide a significant reference for future experimental work.

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Energy band structure, acoustic velocities, optical phonon frequencies and mechanical properties of InP1-xSbx alloys under temperature and pressure

Cited by 27 publications

References 39 publications

Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy

Influence of pressure and composition on electronic properties, phonon frequencies, and sound velocity for the zinc-blende GaAs1-xNx alloy

Response of mechanical and optoelectronic properties for InPxAsySb1–x–y/InAs system to composition

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1−x−y/InAs quaternary semiconductor system

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