Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates

Abstract

It is demonstrated that the energy band gap in epitaxial layers is changed by biaxial elastic strains which are produced by lattice mismatches in heterostructures. The epitaxial layers used in this work were Gax In1−xP layers grown on (001) GaAs substrates by liquid phase epitaxy. The energy band-gap shifts were determined by comparing the photoluminescence peak energies of the as-grown GaxIn1−xP layers with those from free-standing layers removed from the GaAs substrates. It was experimentally found that the energy band gap shifts linearly with the elastic strain in the layer. Assuming that the lattice mismatch was accommodated only by the elastic distortion, the energy band-gap shifts in Ga0.5In0.5P alloys were also calculated. The calculated results are 6.0 eV or 4.9×10−12 eV/dyn cm−2 per unit strain or stress, respectively, for the [100] and [010] biaxial elastic stress. These values are in quite good agreement with the experimental results.

Electronic band alignment at CuGaS2 chalcopyrite interfaces

“…In all cases we can observe that the theoretical values of the lattice mismatch are larger than the experimental values, this is due to the overestimation of the lattice constant produced by standard GGA calculations. Furthermore, the lattice mismatch determines the magnitude of the structural variation displayed by the different types of heterointerfaces, whose magnitude modifies the electronic properties of the semiconductors when forming the heterostructure [27,28]. This modification will affect the type of band alignment.…”

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

“…3(a), the diameter of the tapered nanowires changes from 300 to 10 nm along the growth axis, implying that radiative recombination of excitons must take place within a volume close to the tip of the nanowires in order for the level of quantum confinement to be observed. Residual strain along the direction perpendicular or parallel to the growth direction of the nanowires could have also shifted the bandgap energy [22] or split degenerate hole bands into heavy hole and light hole sub-bands [23]. However, neither the TEM nor the XRD analysis indicated measurable elastic deformation that could have solely accounted for the observed blue shift.…”

Polarization and charge limit studies of strained GaAs photocathodes

“…Most of the information in this section was obtained fiom references [18], [19], [20], [21] and [4]. In addition, a more detailed description of the stress perturbation can be found in Appendix B.…”

“…2.37 can be obtained from the unperturbed wave functions of the valence and conduction bands in a zincblende material. [19] The energy differences between the conduction band and the two newly separated HJ3-IJ-I bands and the spin-orbit band at k = 0 are given, to first order in strain, by…”