Energy band gap of Zinc(Hydr)oxide using absorption, fluorescence and photoconductivity

Effect of Zn(S,O,OH) Buffer Thin Films Formed on CIGS through Different Stages and Reaction Processes in Chemical Bath Deposition: Interpretations from Mechanisms and Transformation Kinetics Perspective

“…As shown in Figure 13, the E g of the thin films using ZnSO 4 and Zn(OAc) 2 was determined to be 3.66 and 3.53 eV, respectively. The E g values of ZnS and ZnO have been previously reported as 3.54-3.91 [41,42] and 3.30 eV, [43,44] respectively, and the reported E g values of the thin films using ZnSO 4 and Zn(OAc) 2 are comparable to the values measured herein. [38] The E g of the thin film using ZnSO 4 was wider than that of the thin film using Zn(OAc) 2 in both the reported and measured values.…”

Role of Ammonia on the Growth Mechanism of ZnO Films Deposited at Ambient Temperature

“…Additionally, the bandgap energy of ZnO is ≈0.2 eV higher than Zn(OH) 2 . 55,56 According with our results, as the films have higher presence of ZnO compared to Zn(OH) 2 , the bandgap energy value tends to increase. This high bandgap energy value has been reported by Morkoç et al, 57 who measured a value of 3.8 eV for high quality ZnO nanorods.…”