Energy band diagram and energy band offsets of Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (p)/Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (n)/InAs 0.9 Sb 0.1 double interface determined by capacitance-voltage measurements

Cheriet, Arbia; Mébarki, M.; Christol, Philippe; Aït‐Kaci, H.

doi:10.1016/j.mssp.2017.02.034

Cited by 4 publications

(1 citation statement)

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“…The offset in CB and VB are purely material dependent, that is, on the material property and a suitable selection of offset value results in performance improvement. [ 11 ] A small positive discontinuity in CB results in higher V oc and fill factor (FF) as it reduces the recombination at the hetero‐interface. [ 12 ] However, if we go on further increasing in the CB discontinuity, it creates an energy barrier against the photogenerated electrons under forward bias that hampers the performance of the cell.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Band Alignment Engineering and Interface Defects on a GaAs/GaSb Heterostructure Solar Cell

Sahoo

Mishra

2022

Physica Status Solidi (a)

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In photovoltaic sector, optimal utilization of the solar spectrum combined with improved power conversion efficiency is the call of the day. Such elasticity is provided by heterostructure solar cells. But it is found that with a high lattice mismatch and band discontinuities, the open‐circuit voltage (Voc) and the fill factor deteriorates handsomely. As a result, the second requirement is still unsatisfied. To address such issues, band alignment engineering is introduced in this paper. Silvaco ATLAS is used to virtually create and verify the proposed model. Herein, different recombination events and their effects on the cell's Voc are investigated in depth. Furthermore, interface trap defect is introduced to investigate its effect on the lower efficiency and Voc. However, it is found that, in GaAs/GaSb heterostructures, the reduced Voc and efficiency issues can be avoided, because the proposed model is able to achieve a lower trap density of 105 cm−2.

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Section: Introductionmentioning

confidence: 99%