Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth

Dubrovskiı̆, V. G.

doi:10.1103/physrevmaterials.4.083401

Cited by 17 publications

(43 citation statements)

References 33 publications

(92 reference statements)

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“…The first set C1 is the same as in refs. [ 14 , 19 ] for self-catalyzed GaAs NWs. The opaque red polygons in the first row of images in Figure 2 represent the deposited ML.…”

Section: Resultsmentioning

confidence: 99%

“…Here, we consider the surface energy only, which depends on the coverage

. The volume contribution to the free energy of forming the ML (containing the kinetic factors such as supersaturation) is neglected in the first approximation, as it should be approximately the same for a given

[ 9 , 19 ]. To calculate the surface energy term of the ML formation energy,

, we consider nucleation at the TPL, which is necessary for the occurrence of the WZ crystal phase in III-V NWs [ 6 ].…”

Section: Modelmentioning

confidence: 99%

“…According to the classical view [ 5 , 6 , 10 , 11 ], each ML growth cycle is composed of three stages: (i) formation of the critical nucleus, (ii) extension of the ML until the full coverage of the planar solid–liquid interface is reached, and (iii) refill of the droplet with group V atoms to recover the initial supersaturation and nucleate the next ML. In situ growth monitoring of III-V NW growth inside a TEM [ 12 , 13 , 14 , 15 , 16 ] and the corresponding modeling [ 12 , 13 , 15 , 17 , 18 , 19 ] have substantially refined the old picture. It has been found that (i) the growth interface of zincblende (ZB) NWs is truncated and oscillates in synchronization with the ML growth, providing additional material to complete the ML, and (ii) the growth interface of wurtzite (WZ) NWs is planar.…”

Section: Introductionmentioning

confidence: 99%

“…Based on the ML size versus coverage extracted from in situ observations, the energetic and kinetics of ML formation with the stopping effect were considered in ref. [ 19 ]. Very importantly, these works gave some estimates for the surface energies of different edge facets of a GaAs ML in the WZ orientation.…”

Section: Introductionmentioning

confidence: 99%

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Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Hijazi

Dubrovskiı̆

2021

Nanomaterials

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The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

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“…The first set C1 is the same as in refs. [ 14 , 19 ] for self-catalyzed GaAs NWs. The opaque red polygons in the first row of images in Figure 2 represent the deposited ML.…”

Section: Resultsmentioning

confidence: 99%

“…Here, we consider the surface energy only, which depends on the coverage

[ 9 , 19 ]. To calculate the surface energy term of the ML formation energy,

, we consider nucleation at the TPL, which is necessary for the occurrence of the WZ crystal phase in III-V NWs [ 6 ].…”

Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Hijazi

Dubrovskiı̆

2021

Nanomaterials

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“…For the typical growth temperatures, this concentration varies between 0.01 and 0.02 [ 33 ]. Note that, similar to GaAs, growth regimes with even lower

may also be possible [ 38 ]. Figure 3 a shows the variation of y with x for different growth temperatures.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamics of the Vapor–Liquid–Solid Growth of Ternary III–V Nanowires in the Presence of Silicon

2021

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Based on a thermodynamic model, we quantify the impact of adding silicon atoms to a catalyst droplet on the nucleation and growth of ternary III–V nanowires grown via the self-catalyzed vapor–liquid–solid process. Three technologically relevant ternaries are studied: InGaAs, AlGaAs and InGaN. For As-based alloys, it is shown that adding silicon atoms to the droplet increases the nanowire nucleation probability, which can increase by several orders magnitude depending on the initial chemical composition of the catalyst. Conversely, silicon atoms are found to suppress the nucleation rate of InGaN nanowires of different compositions. These results can be useful for understanding and controlling the vapor–liquid–solid growth of ternary III–V nanowires on silicon substrates as well as their intentional doping with Si.

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Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

Panciera

Harmand

2022

Physica Rapid Research Ltrs

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The vapor–liquid–solid growth of semiconductor nanowires proceeds via the sequential nucleation and extension of biatomic monolayers at the interface between the solid wire and a liquid catalyst nanodroplet. In the case of III–V compounds, this mother phase contains only a small concentration of the volatile group V atoms. The growth regime where there is not enough such atoms available in the liquid at nucleation to complete a whole monolayer is studied experimentally and theoretically. Each monolayer cycle then consists in the rapid formation of a partial monolayer, followed by a slower propagation stage and by a waiting time preceding the next nucleation. The propagation and waiting times of long sequences of monolayers are measured in situ in a transmission electron microscope at three growth temperatures, in a single GaAs nanowire. The process is modeled and the statistics of the characteristic times are computed numerically and analytically. At low temperature, the weakness of group V desorption from the liquid should lead to a constant total monolayer cycle time, despite the stochasticity of the nucleation events. The modeling of the experiments yields values of several crucial growth parameters and provides guidance for the growth of nanowires in a deterministic regime.

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Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth

Cited by 17 publications

References 33 publications

Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Thermodynamics of the Vapor–Liquid–Solid Growth of Ternary III–V Nanowires in the Presence of Silicon

Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

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