Endurance &gt; 10<sup>11</sup> Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO<sub>2</sub> to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

Liao, C.-Y.; Lou, Z.-F.; Tseng, Hung; Lin, Cheng-Hung; Li, Z.-X.; Hsieh, Fan-Chun; Wang, C.-C.; Hsiang, K.-Y.; Ray, W.-C.; Tseng, Y.-Y.; Chang, Shuo‐Hung; Chen, T.-C.; Lee, M. H.

doi:10.1109/vlsitechnologyandcir46769.2022.9830345

Cited by 12 publications

(8 citation statements)

References 6 publications

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“…The endurance of our non‐volatile phase shifter is primarily determined by the FeFET. An HZO‐based FeFET with 10 11 endurance cycles has been demonstrated recently, [ 44 ] suggesting that our scheme could achieve a high endurance by improving the FeFET. It is noteworthy that we claim our phase shifter to be non‐volatile because the information, which in our case is the threshold voltage of the FeFET, is not lost when the power supply is switched off.…”

Section: Resultsmentioning

confidence: 90%

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Tang,

Watanabe,

Fujita

et al. 2023

Laser & Photonics Reviews

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Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PICs. Non‐volatile phase shifters, which can retain information without a power supply, are highly desirable for low‐power static operations. Here a non‐volatile optical phase shifter is demonstrated by driving a III‐V/Si hybrid metal‐oxide‐semiconductor (MOS) phase shifter with a ferroelectric field‐effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non‐volatile phase shifts up to 1.25π are obtained with CMOS‐compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non‐volatile phase shifters in large‐scale PICs and verify its feasibility by confirming the selective write‐in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large‐scale non‐volatile programmable PICs for emerging computing applications such as deep learning and quantum computing.

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Section: Resultsmentioning

confidence: 90%

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Tang,

Watanabe,

Fujita

et al. 2023

Laser & Photonics Reviews

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“…tial and vacancy in and . In most reports, fabricated thin films are non-stoichiometric and oxygen deficient [31,104] , therefore, oxygen vacancy is the dominant defect in thin films. The charge state of vacancy depends on the Fermi level.…”

Section: Oxygen Vacancy Effectsmentioning

confidence: 99%

“…Various experimental characterizations indicated that V O generation/re-distribution [31,104] and phase transition [104,189] were involved with FE cycling. It was suggested that the field-driven V O generation/distribution and the subsequent charge trapping/de-trapping would influence the ferroelectric response via the modification of local electric field or domain pinning/de-pinning as well as phase transition, which in turn changed the electric field.…”

Section: Fram Cyclingmentioning

confidence: 99%

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Yang¹,

Yu²,

Li³

et al. 2023

J. Semicond.

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The finding of the robust ferroelectricity in HfO2-based thin films is fantastic from the view point of both the fundamentals and the applications. In this review article, the current research status of the future prospects for the ferroelectric HfO2-based thin films and devices are presented from fundamentals to applications. The related issues are discussed, which include: 1) The ferroelectric characteristics observed in HfO2-based films and devices associated with the factors of dopant, strain, interface, thickness, defect, fabrication condition, and more; 2) physical understanding on the observed ferroelectric behaviors by the density functional theory (DFT)-based theory calculations; 3) the characterizations of microscopic and macroscopic features by transmission electron microscopes-based and electrical properties-based techniques; 4) modeling and simulations, 5) the performance optimizations, and 6) the applications of some ferroelectric-based devices such as ferroelectric random access memory, ferroelectric-based field effect transistors, and the ferroelectric tunnel junction for the novel information processing systems.

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“…HfO 2 -based FeFET is a prime candidate for embedded nonvolatile memory (eNVM) due to its excellent CMOS compatibility, scalability, and energy efficiency. − Ever since the discovery of ferroelectricity in doped HfO 2 , significant progress has been made in its integration in advanced technology platforms, thus realizing scaled planar, , FinFET, , and gate-all-around FeFETs. , The more the number of physical gates, the better the electrostatic gate control over the channel. However, irrespective of the number of physical gates present, it typically has only a single electrical port, which is utilized for both read and write operations, as shown in Figure a,b.…”

Section: Introductionmentioning

confidence: 99%

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Zhao,

Deng,

Chatterjee

et al. 2023

ACS Appl. Mater. Interfaces

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Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially in the high-threshold voltage (V TH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where the write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a nonferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-V TH state, thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-V TH state stability. Comprehensive theoretical and experimental validation has been performed on fully depleted silicon-on-insulator (FDSOI) FeFETs integrated on a 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the nonferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.

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Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

Cited by 12 publications

References 6 publications

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

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Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

Cited by 12 publications

References 6 publications

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

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Product

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Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM