Encapsulation of transition metal dichalcogenides crystals with room temperature plasma deposited carbonaceous films

Mahyavanshi, Rakesh D.; Kalita, Golap; Singh, Rupesh; Kondo, Masaharu; Dewa, Takehisa; Kawahara, Toshio; Tanemura, Masaki

doi:10.1039/c7ra06816f

Cited by 2 publications

(1 citation statement)

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“…Integration of TMD materials can be significantly improved by taking into account the technological and experimental constraints into the design of devices. As TMD materials show limited stability when exposed to air [33], an encapsulation layer is mandatory to protect the TMD material from contact with the atmosphere [34][35][36][37][38] or from detrimental subsequent technological steps. Similarly, should the TMD material be deposited by CVD methods, the underlying multi-layer coated substrate has to withstand the high deposition temperature (above 400 °C).…”

Section: Introductionmentioning

confidence: 99%

Design of hybrid MoS₂/photonic devices compatible with technological constraints

Dory¹,

Gauthier-Lafaye²,

Dubreuil³

et al. 2022

Mater. Res. Express

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The integration of transition metal dichalcogenide layers into photonic devices is a current challenge in the field of 2D materials. Based on numerical simulations, this work explores the design of devices combining an MoS2 monolayer with planar photonic gratings sustaining localized optical resonances. A special attention is paid to the technological constraints. The optical response of six devices is compared taking into account the limitations imposed by the growth conditions of the MoS2 layer and the processing of the resonant optical gratings. The reported photonic devices composed of grating filters and a backside reflector on silicon and silica substrates exhibit a theoretical absorption by the MoS2 layer between 85 and 99% at 532 nm. The numerical simulations further show that the addition of an Al2O3 encapsulation layer to protect the MoS2 monolayer results in an increase of the performance of the devices. These hybrid MoS2 based photonic devices are promising technological platforms for the study of the optical properties of integrated MoS2 monolayers.

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Section: Introductionmentioning

confidence: 99%

Design of hybrid MoS₂/photonic devices compatible with technological constraints

Dory¹,

Gauthier-Lafaye²,

Dubreuil³

et al. 2022

Mater. Res. Express

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Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods

Kalita¹

2022

AppliedChem

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Several kinds of chemical vapor deposition (CVD) methods have been extensively used in the semiconductor industries for bulk crystal growth, thin film deposition, and nanomaterials synthesis. In this article, we focus on the microwave-excited surface wave plasma CVD (MW-SWP CVD) method for growth of graphene and related materials. The MW-SWP CVD system consisting of waveguide, slot antenna, and dielectric windows is significant for generating high density plasma with low electron temperature, enabling low temperature growth of materials without damaging the surface of base substrates. The synthesis of graphene and hexagonal boron nitride (hBN) films has been achieved on metals, semiconductors, insulators, and dielectric substrates for application in photovoltaics, sensors, batteries, supercapacitors, fuel cells, and various other electronic devices. The details of the synthesis process for graphene films, vertically-oriented graphene, doped-graphene, and hBN films by the MW-SWP CVD method are summarized to understand the growth mechanism, which will enable further development of the plasma CVD process for material synthesis at a low temperature for industrial applications.

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Encapsulation of transition metal dichalcogenides crystals with room temperature plasma deposited carbonaceous films

Abstract: Demonstrated encapsulation of dichalcogenides layer by coating a carbonaceous film by surface wave plasma technique.

Cited by 2 publications

References 47 publications

Design of hybrid MoS₂/photonic devices compatible with technological constraints

Design of hybrid MoS₂/photonic devices compatible with technological constraints

Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods

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Encapsulation of transition metal dichalcogenides crystals with room temperature plasma deposited carbonaceous films

Abstract: Demonstrated encapsulation of dichalcogenides layer by coating a carbonaceous film by surface wave plasma technique.

Cited by 2 publications

References 47 publications

Design of hybrid MoS2/photonic devices compatible with technological constraints

Design of hybrid MoS2/photonic devices compatible with technological constraints

Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods

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Product

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Design of hybrid MoS₂/photonic devices compatible with technological constraints

Design of hybrid MoS₂/photonic devices compatible with technological constraints