2010
DOI: 10.1002/adma.201002649
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Enabling Strategies in Organic Electronics Using Ordered Block Copolymer Nanostructures

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Cited by 53 publications
(52 citation statements)
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“…The memory switching behaviors of composite materials using various charge-storage filled additives (metal [17][18][19][20][21][22] or fullerene derivatives [23][24][25][26][27][28][29] ) in the supporting matrices were identified as being achieved via several proposed mechanisms, such as charge trapping/detrapping, 18,23,24 charge-transfer effect, 17,21,22,27-29 filament formation, 19,20 and polarization effect. 25,26 When the recording domains are down to the nanoscale, new materials and advanced techniques must be explored to satisfy the need of storage capacity.…”
Section: -29mentioning
confidence: 99%
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“…The memory switching behaviors of composite materials using various charge-storage filled additives (metal [17][18][19][20][21][22] or fullerene derivatives [23][24][25][26][27][28][29] ) in the supporting matrices were identified as being achieved via several proposed mechanisms, such as charge trapping/detrapping, 18,23,24 charge-transfer effect, 17,21,22,27-29 filament formation, 19,20 and polarization effect. 25,26 When the recording domains are down to the nanoscale, new materials and advanced techniques must be explored to satisfy the need of storage capacity.…”
Section: -29mentioning
confidence: 99%
“…[34][35][36] Besides the ordered cylindrical nanostructures of BCP being used to selectively sequester the Au NPs, they also exhibited resistive switching. 21 The distribution of charge-storage sites within the thin memory film layer indeed determines the memory device performance. Recently, we demonstrated a supramolecular approach to prepare controlled domain sizes of poly(fluorenylstyrene)-blockpoly-(2-vinylpyridine) P(StFl-b-P2VP):PCBM composite thin films for use in a non-volatile memory device.…”
Section: -32mentioning
confidence: 99%
“…In the last few decades, many approaches have been proposed for organic nonvolatile memory application, 20−22 for example, the use of polyimides with donor−acceptor units 23 and the hybrid of polymer/metal NPs. 24,25 Previously, we have proposed the combination of redox-active TEMPO and BCPs, and the significance of tailoring BCP morphologies, such as spheres, cylinders, and lamellae to modulate charge transport through the radical/ion-containing BCP layer: (a) nonswitching behavior for lamellae in parallel orientation, (b) write-once and read-many-times (WORM) memory for cylindrical morphology, and (c) rewritable and nonvolatile memory characteristics for spherical domains. 26 Our initial findings for charge-transport modulation through functional BCP nanodomains (morphologies, orientation, and ordering) have a potential impact for the rational design of more efficient organic-based electronic devices.…”
mentioning
confidence: 98%
“…We have explored charge‐transport even in thin solid device configurations, such as diode‐like structured organic resistive memory, and proposed both complementary redox‐active TEMPO and charge‐compensating ion pairs as key components for solid devices . In the last few decades, many approaches have been proposed for organic nonvolatile memory applications, e.g., the use of polyimides with donor–acceptor units and of polymer/metal nanoparticle hybrids . Our earlier work has revealed the significance of the tailoring of block copolymer morphologies and of component locations (TEMPO and the ion pairs) in modulating charge transport through radical‐ and ion‐containing block copolymer layers for imparting characteristics like: (a) nonswitching behavior for lamellae in parallel orientation, (b) write‐once and read‐many‐times (WORM) memory for cylinders, and (c) rewritable and nonvolatile memory characteristics for spheres.…”
Section: Introductionmentioning
confidence: 99%