Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}\times \sqrt{3}\)-Sn, \(\sqrt{3}\times \sqrt{3}\)-In and \(2\sqrt{3}\times 2\sqrt{3}\)-Sn Surfaces

Ohta, Hiroshi; Kinoshita, Toyohiko; Yaegashi, Yuji; Suzuki, Shoji; Kono, S.

doi:10.1143/jpsj.56.4015

Cited by 39 publications

(8 citation statements)

References 22 publications

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“…Subsequent STM studies [3][4][5][6] have also failed to resolve the structure of the underlayer. The electronic structure of the 2 ͱ 3 surface has been investigated with scanning tunneling spectroscopy ͑STS͒, 4,6 angle-resolved photoelectron spectroscopy ͑ARPES͒, 6,7 and k-resolved inverse photoelectron spectroscopy ͑KRIPES͒ ͑Ref. 7͒ resulting in the identification of several filled and empty states near the Fermi level ͑E F ͒.…”

Section: Introductionmentioning

confidence: 99%

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

et al. 2010

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The Si͑111͒ surface with an average coverage of slightly more than one monolayer of Sn, exhibits a 2 ͱ 3 ϫ 2 ͱ 3 reconstruction below 463 K. In the literature, atomic structure models with 13 or 14 Sn atoms in the unit cell have been proposed based on scanning tunneling microscopy ͑STM͒ results, even though only four Sn atoms could be resolved in the unit cell. This paper deals with two issues regarding this surface. First, high-resolution angle-resolved photoelectron spectroscopy ͑ARPES͒ and STM are used to test theoretically derived results from an atomic structure model comprised of 14 Sn atoms, ten in an underlayer and four in a top layer ͓C. Törnevik, M. Hammar, N. G. Nilsson, and S. A. Flodström, Phys. Rev. B 44, 13144 ͑1991͔͒. Low-temperature ARPES reveals six occupied surface states. The calculated surface band structure only reproduces some of these surface states. However, simulated STM images show that certain properties of the four atoms that are visible in STM are reproduced by the model. The electronic structure of the Sn atoms in the underlayer of the model does not correspond to any features seen in the ARPES results. STM images are presented which indicate the presence of a different underlayer consisting of eight Sn atoms, which is not compatible with the model. These results indicate that a revised model is called for. The second issue is the reversible transition from a 2 ͱ 3 ϫ 2 ͱ 3 phase below 463 K to a 1 ϫ 1 phase corresponding to a molten Sn layer, above that temperature. It is found that the surface band structure just below the transition temperature is quite similar to that at 100 K. The surface band structure undergoes a dramatic change at the transition. A strong surface state, showing a 1 ϫ 1 periodicity, can be detected above the transition temperature. This state resembles parts of two surface states which, already before the transition temperature is reached, have begun a transformation and lost much of their 2 ͱ 3 ϫ 2 ͱ 3 periodicities. Calculated surface band structures obtained from 1 ϫ 1 models with one monolayer of Sn are compared with ARPES and STM results. It is found that the strong surface state present above the transition temperature shows a dispersion similar to that of a calculated surface band originating from the Sn-Si interface with the Sn atoms in T 1 sites.

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Section: Introductionmentioning

confidence: 99%

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

et al. 2010

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“…The Si(111)ͱ3ϫͱ3R30°-Ga surface 8,9 and the Si(111)ͱ3ϫͱ3R30°-In surface [9][10][11] have also been studied using ARUPS. The ARUPS spectra of the three surfaces ͑Al, Ga, and In͒ were found to be almost indistinguishable.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of theSi(111)3×3R30°−Bsurface

2002

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The plane-wave pseudopotential density functional theory ͑DFT͒ package FHI98MD has been used to optimize the geometry of the Si(111)ͱ3ϫͱ3R30°-B(S 5 ) configuration. The resultant geometry has been found to be in excellent agreement with recent experimental results. By calculating the band structure for the B(S 5 ) configuration and carefully analyzing the nature of the wave functions in the vicinity of the Fermi energy, we have been able to identify the surface states along the various symmetry directions of the surface Brillouin zone ͑SBZ͒. The overall dispersion of both the occupied and unoccupied surface state bands is found to be in excellent agreement with the angle-resolved photoemission data. The theoretical calculations also predict the occurrence of two occupied surface state bands at the ⌫ and M points of the SBZ. The splitting of these bands is predicted to be 0.27 eV and 0.35 eV, respectively, in good agreement with experiment.

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“…However in contrast to the inverse photoemission study, we find the surface is metallic rather than semiconducting. In the photoemission results reported by Kinoshita et al [16], the c phase was not specifically mentioned but spectra were shown as a function of coverage with the LEED pattern varying from (7 · 7) to the p 3 phase. At low coverage, where one expects the c phase, the spectra appear to show a finite density of states at the Fermi level, suggesting that also in that case the surface was metallic.…”

Section: Sts Of the 1/3 ML Sn/simentioning

confidence: 96%

“…Angle resolved ultraviolet photoemission spectroscopy (ARUPS) experiments on this system have been reported at room and low temperature [9,[15][16][17] for the a phase. A Sn induced surface state is induced which disperses through the Brillouin zone (BZ).…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling spectroscopy investigation of the (√3×√3)R30° Sn/Si(111) α and γ surfaces

et al. 2004

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Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}\times \sqrt{3}\)-Sn, \(\sqrt{3}\times \sqrt{3}\)-In and \(2\sqrt{3}\times 2\sqrt{3}\)-Sn Surfaces

Cited by 39 publications

References 22 publications

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

Electronic structure of theSi(111)3×3R30°−Bsurface

Scanning tunneling spectroscopy investigation of the (√3×√3)R30° Sn/Si(111) α and γ surfaces

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