Empowering energy‐water nexus with cutting‐edge MnS₂:CoS:Al₂S₃ thin film deposited through physical vapour deposition

Abstract

The objective of this study is to thoroughly investigate the synthesis and application of a thin film MnS2:CoS:Al2S3. To produce the thin film, diethyldithiocarbamate as a source of sulphur through a technique called physical vapour deposition was utilized. A wide range of analytical techniques were used to examine the structural, morphological, and optical properties of the fabricated material. X‐ray diffraction (XRD) analysis revealed the crystallite size 26.4 nm with a crystallinity of 77%. The optical properties determined the band gap energy to be 4.02 eV. Cabbage‐like assemblies were confirmed through scanning electron microscopy (SEM). X‐ray photoelectron spectroscopy unveiled distinct core level peaks associated with Mn 2p, Al 2p, Co 2p, and S 2p. To evaluate the electrochemical properties of the material, voltammetry measurements were conducted. The results from these experiments revealed an exceptional specific capacitive performance with a value of 792.6 Fg−1. This outstanding performance, coupled with the notable stability of the thin film during multiple cycles, positions it as a highly promising candidate for various energy storage applications. Furthermore, an extensive investigation was carried out to assess the photocatalytic capabilities of the fabricated material. Its efficiency in degrading different environmental pollutants was carefully evaluated.