Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

Harrington, R. C.; Kauppila, J. S.; Maharrey, J. A.; Haeffner, T. D.; Sternberg, Andrew L.; Zhang, E. X.; Ball, D. R.; Nsengiyumva, Patrick; Bhuva, B. L.; Massengill, L.W.

doi:10.1109/tns.2019.2920621

Cited by 8 publications

(5 citation statements)

References 12 publications

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“…We have assumed that σ for L lower than this hump point is governed by charge collection from inside the region of sensitive transistors while σ for larger L is governed by charge collection from outside. This assumption is in line with the analysis of Harrington et al [4]. In fact, our initial attempt to fit the model to the entire region failed.…”

Section: F 14/16-nm Bulk Fin Dffsupporting

confidence: 86%

“…3) The analysis of the V DD dependence often relies on a fit of exp (−Q C /Q coll ), which is a modified version of the Hazucha and Svensson model, where Q coll represents collected charge [3], [4]. 4) For SOI SRAMs, Q coll is widely given by β(0.01L)d SOI , where β and d SOI represent the parasitic bipolar junction transistor amplification factor and the thickness of the SOI film, respectively, as illustrated in Fig.…”

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

“…Cross section curves of the 14/16-nm bulk fin DFF (case F): measurement results (symbols) [4] and model predictions (lines).…”

Section: F 14/16-nm Bulk Fin Dffmentioning

confidence: 99%

“…Characterizing the V DD dependence has been increasingly important to meet the demand for low power consumption and reliability at the same time because σ typically increases exponentially as V DD decreases. Researchers need to repeat beam testing under various V DD conditions and analyze test results with models different from the Weibull model [3], [4]. These models are mostly based on the model originally derived by Hazucha and Svensson [5].…”

Section: Introductionmentioning

confidence: 99%

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An SRAM SEU Cross Section Curve Physics Model

Kobayashi

Hirose

Sakamoto

et al. 2022

IEEE Trans. Nucl. Sci.

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Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due to transient noise caused by a single strike of radiation. Beam testing has been extensively used to measure the SEU cross section of SRAMs as a function of the linear energy transfer (LET) of charged particle radiation. The evolution of the cross section as a function of LET is called the cross section curve, which plays a vital role in upset rate analysis for hardness assurance. Various analytical models have been developed to describe SRAM SEU cross section curves, and they have proven to be useful in reducing the cost of beam testing as well as revealing the physics behind test results. However, they involve arbitrary parameters, which make it challenging to predict cross section curves without any beam results. Moreover, the current method of analyzing cross section curves or the LET dependence of cross sections relies on a model different from that is used in the analysis of power-supplyvoltage dependence, which is becoming increasingly important because of the demand for low-power operation. To overcome these problems, this article proposes a unified equation that describes both LET and the power-supply-voltage dependence of SRAM SEU cross sections. It comprises only parameters that are physically clear and familiar to SEU researchers. As well as giving possible constraints, comparisons with data from the literature suggest it can be applied to SRAMs fabricated in bulk and silicon-on-insulator (SOI) processes across generations from the early 1000-nm-scale to the current 10-nm-scale technology nodes.

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Section: F 14/16-nm Bulk Fin Dffsupporting

confidence: 86%

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

“…Cross section curves of the 14/16-nm bulk fin DFF (case F): measurement results (symbols) [4] and model predictions (lines).…”

Section: F 14/16-nm Bulk Fin Dffmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An SRAM SEU Cross Section Curve Physics Model

Kobayashi

Hirose

Sakamoto

et al. 2022

IEEE Trans. Nucl. Sci.

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“…We conducted a preliminary simulation experiment using the N 1 transistor. The amounts of charge deposited in N 1 under various SE conditions were then extracted and compared with values theoretically estimated from (14). We confirmed that their differences overall ranged within 10%.…”

Section: Appendix B Uncertainty Of Lmentioning

confidence: 53%

Threshold and Characteristic LETs in SRAM SEU Cross Section Curves

Kobayashi

Uematsu

Hirose

2023

IEEE Trans. Nucl. Sci.

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Characterizing the sensitivity of a static random access memory (SRAM) to single-event upset (SEU) is an essential task for assuring its soft-error reliability. However, this task often imposes a burden because it usually requires many cycles of accelerator-based irradiation tests. A model recently proposed is a very simple exponential-type equation but has strong potential to reduce the burden because of its capability to predict SEU cross sections in various conditions. The aim of the present study is to revisit the model in terms of threshold parameters called threshold linear energy transfer (LET) and critical charge. Although these threshold parameters are widely used as key parameters that describe whether an SEU occurs or not, they are not seen in the model. This article explores such missing threshold parameters, suggesting that they successfully appear by introducing a factor of five to the original expression.

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