Emitter Formation and Contact Realization by Diffusion for Germanium Photovoltaic Devices

Posthuma, Niels; Heide, J. van der; Flamand, Giovanni; Poortmans, Jozef

doi:10.1109/ted.2007.894610

Cited by 83 publications

(60 citation statements)

References 10 publications

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“…Temperature was increased to 120 ˚C with 10 ˚C/min ramping rate, which was slow enough to prevent SOD film cracking. 8) However, this film was highly non-uniform as confirmed by optical microscopy. The nonuniformity is clearly identified as line-shaped wrinkles corresponding to variations in film thickness.…”

Section: Process Optimizationmentioning

confidence: 86%

“…This concentration exceeds the solid solubility of P in Ge, which should be enough to achieve a high active-carrier concentration with a uniform doping profile across the whole Ge thickness. 8) The main difference between the two dopant sources is the solvent, group A is a water-based solution of a polymer contatining P, while group B is alcohol-based (ethanol) solution containing P. This affects the solution properties such as viscosity, which is crucial for spin-coating. According to data from suppliers, viscosity (at 25 ˚C) of the group A dopant source is 7 cP, while it is between 0.80 -1.2 cP for group B dopant.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Al-Attili

Kako

Husain

et al. 2015

Jpn. J. Appl. Phys.

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High electron doping of germanium (Ge) is considered to be an important process to convertGe into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping.Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.2

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Section: Process Optimizationmentioning

confidence: 86%

Section: Experimental Methodsmentioning

confidence: 99%

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Al-Attili

Kako

Husain

et al. 2015

Jpn. J. Appl. Phys.

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show abstract

“…Common problems that would arise are such as dopant spreading in the oxide layer, thickness variation especially during the early stages and cost related to additional processes such as etching and annealing (Zant, 2000). The SOD technique have been used to produce the p+ and n+ wells in silicon substrates (Gangopadhyay et al 2003;Oh et al 2004), n+ wells in germanium layers (Posthuma et al 2007) as well as the p+ and n+ wells in GaAs substrates (Filmtronics, 2006a;Filmtronics, 2006b). In addition, the SOD diffusion technique was used previously in the development of a silicon-based lateral p-i-n photodiode in our laboratory (Ehsan & Shaari, 2001;Menon, 2005).…”

Section: Spin-on Chemical Fabrication Methods Of Ingaas/inp-based Ilppmentioning

confidence: 99%

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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“…All other calculations for the bottom cell are the same. The properties of the bottom cells reported are based on the best performing bottom cells produced by other groups for mechanical stacked solar cells [17], [19], [20] while the top GaAs solar cell is based on those being produced within the Tyndall National Institute. The material properties used are given in Table 1.…”

Section: B) Absorption Modellingmentioning

confidence: 99%

Mechanically stacked solar cells for concentrator photovoltaics

Mathews

O’Mahony²,

Yu³

et al. 2011

REPQJ

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Access to the full text of the published version may require a subscription. Item AbstractThe power output of dual-junction mechanically stacked solar cells comprising different sub-cell materials in a terrestrial concentrating photovoltaic module has been evaluated. The ideal bandgap combination of both cells in a stack was found using EtaOpt. A combination of 1.4 eV and 0.7 eV has been found to produce the highest photovoltaic conversion efficiency under the AM1.5 Direct Solar Spectrum with x500 concentration. As EtaOpt does not consider the absorption profile of solar cell materials; the practical power output per unit area of a dual junction mechanically stacked solar cell has been modelled considering the optical absorption co-efficients and thicknesses of the individual solar cells. The model considered a GaAs top cell and a Ge, GaSb, Ga 0.47 In 0.53 As or Si bottom cell. It was found that GaSb gives the highest power contribution as a bottom cell in a dual junction configuration followed by Ge and GaInAs. While the additional power provided by a Si bottom cell is less than these it remains a suitable candidate for a bottom cell owing to its lower cost.

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Emitter Formation and Contact Realization by Diffusion for Germanium Photovoltaic Devices

Cited by 83 publications

References 10 publications

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Mechanically stacked solar cells for concentrator photovoltaics

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