Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

Jung, Byung Oh; Bae, Si‐Young; Lee, Seunga; Kim, SangYun; Lee, Jun Young; Honda, Yoshio; Amano, Hiroshi

doi:10.1186/s11671-016-1441-6

Cited by 36 publications

(30 citation statements)

References 41 publications

(55 reference statements)

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“…The ME peaks monotonically blue-shifted with decreasing temperature, consistent with Varshni’s empirical model58. The total peak energy of the ME monotonically shifted by 89 meV, also reasonably reflecting the potential gradient behavior6465. This potential gradient tends to hinder the typical temperature-dependent S-shaped curves, originated from deep indium localisations666768.…”

Section: Resultssupporting

confidence: 78%

III-nitride core–shell nanorod array on quartz substrates

Bae

Min

Hwang

et al. 2017

Sci Rep

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We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

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Section: Resultssupporting

confidence: 78%

III-nitride core–shell nanorod array on quartz substrates

Bae

Min

Hwang

et al. 2017

Sci Rep

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“…6 ) is similar to typical blue LEDs. At reverse bias, the structure is weakly leaking, which demonstrates the good quality of the overall processing 15 . However, the series resistance at forward bias is quite high (~120 Ω), mostly due to the bad lateral current spreading of the thin ITO electrode and p-conducting layer.…”

Section: Resultsmentioning

confidence: 95%

“…The device processing of such structures is rather complicate. The common strategy consists in planarization of the device after growth by filling the gaps in the NRs array with an insulating polymer 14 or directly during the p-GaN deposition by coalescing the rods 15 – 17 . All of these approaches usually result in more or less leaking devices with insufficient color controllability.…”

Section: Introductionmentioning

confidence: 99%

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin

Bae

Shubina

et al. 2018

Sci Rep

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We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly the whole visible region, including UV, blue, green, and orange ranges. The intensity of each emission is strongly dependent on the current density, however the LEDs demonstrate a rather low color saturation. Based on transmission electron microscopy data and comparing them with electroluminescence and photoluminescence spectra measured at different excitation powers and temperatures, we could identify the spatial origination of each of the emission bands. We show that their wavelengths and intensities are governed by different thicknesses of the QWs grown on different crystal facets of the NRs as well as corresponding polarization-induced electric fields. Also the InGaN incorporation strongly varies along the NRs, increasing at their tips and corners, which provides the red shift of emission. With increasing the current, the different QW regions are activated successively from the NR tips to the side-walls, resulting in different LED colors. Our findings can be used as a guideline to design effectively emitting multi-color NR-LEDs.

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“…These are critical parameters for the subsequent growth of active shell material and for fabricating devices. Indeed most, if not all, visible InGaN/GaN-based, electrically-injected LEDs rely on nanorods created through selective area growth, which results in good control of orientation, uniformity, and positioning [ 36 , 37 ]. However, in the case of AlN, the SAG of Al(Ga)N-based nanorods has not been achieved due to the very high sticking coefficient and the low diffusion length of Al atoms [ 38 ].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Top-Down/Bottom-Up Fabrication of a Highly Uniform and Organized Faceted AlN Nanorod Scaffold

et al. 2018

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As a route to the formation of regular arrays of AlN nanorods, in contrast to other III-V materials, the use of selective area growth via metal organic vapor phase epitaxy (MOVPE) has so far not been successful. Therefore, in this work we report the fabrication of a highly uniform and ordered AlN nanorod scaffold using an alternative hybrid top-down etching and bottom-up regrowth approach. The nanorods are created across a full 2-inch AlN template by combining Displacement Talbot Lithography and lift-off to create a Ni nanodot mask, followed by chlorine-based dry etching. Additional KOH-based wet etching is used to tune the morphology and the diameter of the nanorods. The resulting smooth and straight morphology of the nanorods after the two-step dry-wet etching process is used as a template to recover the AlN facets of the nanorods via MOVPE regrowth. The facet recovery is performed for various growth times to investigate the growth mechanism and the change in morphology of the AlN nanorods. Structural characterization highlights, first, an efficient dislocation filtering resulting from the ~130 nm diameter nanorods achieved after the two-step dry-wet etching process, and second, a dislocation bending induced by the AlN facet regrowth. A strong AlN near band edge emission is observed from the nanorods both before and after regrowth. The achievement of a highly uniform and organized faceted AlN nanorod scaffold having smooth and straight non-polar facets and improved structural and optical quality is a major stepping stone toward the fabrication of deep UV core-shell-based AlN or AlxGa1-xN templates.

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Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

Cited by 36 publications

References 41 publications

III-nitride core–shell nanorod array on quartz substrates

III-nitride core–shell nanorod array on quartz substrates

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Hybrid Top-Down/Bottom-Up Fabrication of a Highly Uniform and Organized Faceted AlN Nanorod Scaffold

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