EMI-inducted failures in MOS power transistors

Bona, C.; Fiori, Franco

doi:10.1109/iceaa.2009.5297367

Cited by 5 publications

(7 citation statements)

References 3 publications

(2 reference statements)

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“…Similar analyses were previously performed in [7] where a power transistor with a much larger gate parasitic resistance was considered. In that case the predictions of the power transistor failures, that were based on small-signal analyses, were in good agreement with the results of time domain simulations but they had not been confirmed by experimental results.…”

Section: Mos Transistor Susceptibility To Emimentioning

confidence: 75%

“…In a previous work [7], it was obtained that in the considered framework the model of the parasitic gate resistance proposed by Razavi et al [10], which generally provides good results both in linear and non-linear performance estimations, fails to accurately predict the power transistor susceptibility. Therefore, in this paper a new model that takes in account the distributed effect of large parasitic gate electrode resistance has been proposed.…”

Section: Discussionmentioning

confidence: 98%

“…This model will be compared with and related to the well known lumped model proposed by Razavi et al [10] and used in [7,8].…”

Section: Mos Transistor Susceptibility To Emimentioning

confidence: 99%

“…This model provides good accuracy both in linear and nonlinear analyses and furthermore it can be readily applied to different device structures. This lumped model was also used in [7] where the susceptibility of the MOS transistor to the drain injected EMI was related to the gate driver output resistance and to the parasitic polysilicon gate resistance. But in such analyses the Razavi model failed to accurately predict the power transistor susceptibility and for this reason further insights are presented in what follows.…”

Section: Mos Transistor Modelsmentioning

confidence: 99%

“…[2,3], while others have dealt with the susceptibility of single transistors [4,5]. In particular the effect of radio frequency interference (RFI) on the operation of a high-side power transistor have been shown in [6], while [7] have discussed the susceptibility of the low-side configuration when the RFI is superimposed onto the drain-source nominal voltage.…”

Section: Introductionmentioning

confidence: 98%

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MOS power transistor model for Electromagnetic Susceptibility analysis

Bona

Fiori

2011

Microelectronics Reliability

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Section: Mos Transistor Susceptibility To Emimentioning

confidence: 75%

Section: Discussionmentioning

confidence: 98%

“…This model will be compared with and related to the well known lumped model proposed by Razavi et al [10] and used in [7,8].…”

Section: Mos Transistor Susceptibility To Emimentioning

confidence: 99%

Section: Mos Transistor Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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MOS power transistor model for Electromagnetic Susceptibility analysis

Bona

Fiori

2011

Microelectronics Reliability

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Transmission and multiple reflection mechanisms of guided streamers propagating through grounded annular electrode and interacting with grounded surface electrode

Decauchy

Dufour

2022

Plasma Sources Sci. Technol.

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The repeatable dynamics and the reversal propagation of guided streamers remains a major question of fundamental physics. In this article, trains of positive guided streamers are generated within an atmospheric pressure plasma jet supplied in helium and polarized by a high-voltage nanosecond pulse generator. The device is completed by two distant targets: a grounded annular electrode coaxially centered around the capillary through which guided streamers can propagate and a grounded surface electrode on which they can interact. The resulting transmitted and multiple reflected guided streamers are measured combining optical characterization (fast ICCD imaging) and electrical characterization (high voltage probe and current monitors). While the electrical approach provides information on the capacitive/conductive nature of the current peaks as well as on their positive/negative value, fast ICCD imaging distinguishes whether the guided streamers are incident, reflected or transmitted. Combining these two techniques allow us to demonstrate experimentally that the reflected streamers are negative contrarily to the others. Besides, 4 types of reflections have been highlighted: a reflection (r) at the outlet of the capillary, a reflection on the grounded surface electrode (R) and two reflections (r’ and r”) observed when an incident guided streamer passes through the grounded annular electrode. The two techniques agree that the characteristic propagation times are always shorter for reflected negative streamers than for the positive ones propagating forward. Hence, for a grounded annular electrode placed 3 cm away from the high voltage electrode, propagation time is 80 ns for reflection versus 250 ns for transmission. These characteristic propagation times are even shorter when the annular electrode is brought closer to the surface electrode with velocities typically higher than 300 km/s. In addition, the intensity ratios of reflected/incident guided currents drop sharply, typically losing one decade over a counter-propagation length of only 3-5 cm. Finally, all these experimental data are utilized to build an equivalent electrical model that allow to better understand the dynamics of the guided streamers and explain their transmission and reflection modes upon their interaction with the two distant grounded electrodes.

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