EMI Generation Characteristics of SiC and Si Diodes: Influence of Reverse-Recovery Characteristics

Yuan, Xibo; Walder, Sam; Oswald, Niall

doi:10.1109/tpel.2014.2340404

Cited by 55 publications

(17 citation statements)

References 9 publications

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“…At the time of Vds rising to Vdc, V * gs will reach the maximum value V * gs_max which can be taken as the spurious gate voltage. This time can be calculated by (3). Afterwards, the spurious gate voltage V * gs_max at this time can be obtained from (2).…”

Section: B Gate Drive Pulse Used For Double Pulse Testmentioning

confidence: 99%

“…the parasitic inductance of printed circuit board (PCB) traces and the parasitic capacitance of switching devices [2]. The high dv/dt and di/dt during the fast switching transient will bring serious electromagnetic interference (EMI) problem [3]. And the high dv/dt can intensify the interaction between the two complementary SiC MOSFETs of the same phase leg (crosstalk [4]).…”

Section: Introductionmentioning

confidence: 99%

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A 100kHz 95.91% efficiency SiC-device-based split output converter with EMI reduction

Yan

Yuan

2016

2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)

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Section: B Gate Drive Pulse Used For Double Pulse Testmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 100kHz 95.91% efficiency SiC-device-based split output converter with EMI reduction

Yan

Yuan

2016

2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia)

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“…High dv/dt caused by the high switching speed can intensify the interaction between the two complementary SiC MOSFETs of the same phase leg (crosstalk [4]), inducing spurious gate voltage which may lead to the shoot-through failure of the converters. Besides, the high dv/dt and di/dt will bring more serious electromagnetic interference (EMI) problem [5]. Another issue for the adoption of SiC MOSFETs is that, the intrinsic body diode of the SiC MOSFET tends to have relatively higher forward voltage drops and larger reverse-recovery losses compared to the purpose-designed diode.…”

Section: Introductionmentioning

confidence: 99%

Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

Yan

Yuan

Geng

et al. 2017

IEEE Trans. Power Electron.

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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/userguides/explore-bristol-research/ebr-terms/ This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see Abstract-The adoption of silicon carbide (SiC)MOSFETs and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultra-fast switching, such as phase-leg shoot-through ('crosstalk' effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g. lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that, the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100kHz with suppressed crosstalk, lower turnon losses, and reduced EMI.Index Terms-Silicon carbide (SiC), split output converters, crosstalk, efficiency, electromagnetic interference (EMI).

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“…A major concern in synchronous dc-dc converters is the reverse recovery effect of the synchronous transistor's antiparallel body diode at the instant of turning on the main transistor T (mainFET). For the duration of the reverse recovery phenomena, both transistors are exposed to high current change rates and high peak reverse recovery currents which significantly increase switching losses, cause electromagnetic interference, and lead to dangerous operating conditions [8]- [10]. Another drawback of hard-switched converters that utilize synchronous rectification is the unwanted Cdv/dt-induced turn-on of the synchronous transistor (syncFET) immediately after its body diode recovers [11], [12].…”

Section: Introductionmentioning

confidence: 99%

DCM-Based Zero-Voltage Switching Control of a Bidirectional DC–DC Converter With Variable Switching Frequency

Konjedic

Korošec

Truntič

et al. 2016

IEEE Trans. Power Electron.

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This paper investigates a control approach for achieving reliable zero-voltage switching transitions within the entire operating range of a conventional nonisolated bidirectional dc-dc converter that utilizes synchronous rectification. The approach is based on operation in the discontinuous conduction mode with a constant reversed current of sufficient amplitude, which is achieved by load-dependent variation of the switching frequency. This paper focuses on the obtained resonant voltage transitions and provides analytical models for determining the reversed current and timing parameters that would ensure safe, reliable and highly efficient operation of the converter. In addition, the proposed approach solves the synchronous transistor's spurious turn-on and body diode reverse recovery induced issues, does not require any additional components or circuitry for its realization, and can be entirely implemented within a digital signal controller. The effectiveness and performance of the presented control approach was confirmed in a 1-kW experimental bidirectional dc-dc converter that achieved 97% efficiency over a wide range of output powers at switching frequencies above 100 kHz.

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EMI Generation Characteristics of SiC and Si Diodes: Influence of Reverse-Recovery Characteristics

Cited by 55 publications

References 9 publications

A 100kHz 95.91% efficiency SiC-device-based split output converter with EMI reduction

A 100kHz 95.91% efficiency SiC-device-based split output converter with EMI reduction

Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

DCM-Based Zero-Voltage Switching Control of a Bidirectional DC–DC Converter With Variable Switching Frequency

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