Emerging Trends in Nano Structured Silicon Detectors for Neutron Spectroscopy

Cyriac, Siji; Bindhu, B.; Midhun, C. V.; Musthafa, M.M.

doi:10.1007/s12633-021-00961-4

Cited by 7 publications

(2 citation statements)

References 35 publications

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“…Presently, there is an evident lack of standardized testing and validation protocols to authenticate the efficiency and reliability of these intertwined systems in tangible scenarios. Additionally, economic barriers, predominantly the elevated costs associated with smart materials and self-healing agents, could impede their broad-scale adoption [46]. However, the horizon is ripe with research opportunities and innovations.…”

Section: Challenges and Future Perspectivesmentioning

confidence: 99%

Emerging Trends in Damage Tolerance Assessment: A Review of Smart Materials and Self-Repairable Structures

Firoozi,

Firoozi

2024

SDHM

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The discipline of damage tolerance assessment has experienced significant advancements due to the emergence of smart materials and self-repairable structures. This review offers a comprehensive look into both traditional and innovative methodologies employed in damage tolerance assessment. After a detailed exploration of damage tolerance concepts and their historical progression, the review juxtaposes the proven techniques of damage assessment with the cutting-edge innovations brought about by smart materials and self-repairable structures. The subsequent sections delve into the synergistic integration of smart materials with self-repairable structures, marking a pivotal stride in damage tolerance by establishing an autonomous system for immediate damage identification and self-repair. This holistic approach broadens the applicability of these technologies across diverse sectors yet brings forth unique challenges demanding further innovation and research. Additionally, the review examines future prospects that combine advanced manufacturing processes with data-centric methodologies, amplifying the capabilities of these 'intelligent' structures. The review culminates by highlighting the transformative potential of this union between smart materials and self-repairable structures, promoting a sustainable and efficient engineering paradigm.

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Section: Challenges and Future Perspectivesmentioning

confidence: 99%

Emerging Trends in Damage Tolerance Assessment: A Review of Smart Materials and Self-Repairable Structures

Firoozi,

Firoozi

2024

SDHM

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“…Irradiation damage to all types of nuclear materials has always been a critical issue in the development of nuclear energy [1]. Semiconductors based on SiC are promising for applications in particle detectors and power devices due to their excellent performance in extreme environments, such as environments in space exploration or nuclear facilities [2,3]. Among the various SiC polytypes, 4H-SiC has large forbidden bandwidth (3.2 eV) and a high electron mobility (1200 cm 2 /V•s).…”

Section: Introductionmentioning

confidence: 99%

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Tian

et al. 2023

J. Phys. D: Appl. Phys.

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The effects of electric polarization and defect energy levels induced by C4+ irradiation on the electrical behavior of 4H-SiC Schottky Barrier Diodes (SBDs) are discussed. The parameters of the SBDs were extracted from capacitance-voltage (C-V) and current-voltage (I-V) measurements, the deep level transient spectroscopy (DLTS) was used to identify defect energy levels. In addition, the dielectric function and energy band structure of 4H-SiC were calculated using the first-principles approach to verify the enhancement of polarization and the origin of the defect energy levels. The results show that the net (donor) carrier concentration (Nd) increases with the increase of irradiation fluence, which is caused by the competition between irradiation-induced defects and the polarization effect. On the one hand, Z1/2 is determined by DLTS. It is related to the doubly negatively (2-|0) charged state of Vc (carbon vacancy), which is a double acceptor. The intensity of the Z1/2 peak increases with increasing irradiation fluence, which means that the defects caused by irradiation should reduce the Nd. On the other hand, the polarization effect does exist and it becomes stronger with the increase of the irradiation fluence, which makes the Nd increases. Obviously, the polarization effect induced by the irradiation is dominant for Nd when the depth of ion penetration is in the shallow layer behind the metal-semiconductor (M-S) interface. Irradiation induced electron traps and an uneven distribution of positively charged centers, which can cause ln(I)-V to exhibit a non-linear component before reaching the turn-on voltage. The series resistance (Rs), reverse current (IR) increases and the forward current decreases with the increase of irradiation fluence. All those show that the irradiation cause degradation of Ni/4H-SiC SBD performance.

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Effects of Epithermal Neutron Irradiation on the Characteristics of the Porous Silicon

Cyriac

Bindhu

Midhun

et al. 2022

Silicon

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Emerging Trends in Nano Structured Silicon Detectors for Neutron Spectroscopy

Cited by 7 publications

References 35 publications

Emerging Trends in Damage Tolerance Assessment: A Review of Smart Materials and Self-Repairable Structures

Emerging Trends in Damage Tolerance Assessment: A Review of Smart Materials and Self-Repairable Structures

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Effects of Epithermal Neutron Irradiation on the Characteristics of the Porous Silicon

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