Emerging Trends in 2D TMDs Photodetectors and Piezo‐Phototronic Devices

Abstract

In terms of mechanical properties, atomically thin, 2D layered materials outperform traditional bulk materials and even some 1D nanowires. [10] In addition, new 2D-layered semiconductors could assist next-generation photodetectors avoid some of the limitations of traditional semiconductor technology. [11][12][13][14][15][16][17][18][19][20] Layered 2D semiconducting crystals have strong covalent bonds between their layers but they have weak van der Waals (vdW) bonds. As a result, it is possible to produce ultrathin 2D materials on flexible polymer substrates using mechanical transfer and delamination techniques that do not account for crystal lattice mismatch. [21][22][23] Second, trap states, such as point and line defects at a covalently or ionically bound interface are typically absent in 2D-layered crystals, which is due to the interlayer vdW bonding without any dangling bonds. This implies that reducing the chance of nonradiative carrier recombination will improve the efficiency of the devices that convert light into electricity. Several monolayer or multilayer 2D materials have more importantly been developed. [24][25][26][27][28][29][30][31] For example, transition-metal dichalcogenides (TMDs) have been discovered to be high-performance piezoelectric materials, [19,[32][33][34][35][36][37][38][39][40][41][42][43][44][45] h-BN, and III-VI compounds, which implies that the mechanical agitation can directly affect the device's performance. [46][47][48][49] Ultrathin 2D layered semiconductor photodetectors' photoelectric conversion efficiency is lower than anticipated despite these benefits because the active monolayer or a few layers do not effectively absorb light. Furthermore, most 2D semiconductors only have piezoelectricity in the layers with an odd number of layers, such as a single layer. This makes it hard to use them in piezo-phototronic systems. It is very important to look for suitable piezoelectric 2D crystals with no thickness limit in order to solve the problems with regards to making high-performance flexible self-powered photodetectors. A novel technique called the piezo-phototronic effect involves externally deforming the device to regulate the creation, recombination, and separation of charge carriers produced by photons. [50] This finding significantly affects how well a device performs in flexible optoelectronics. There has been a lot of interest in 2D piezo-phototronic nanomaterials since Wu et al. published the initial experimental investigation of monolayer MoS 2 -based strain-gated flexible optoelectronics. [51] The piezo-phototronic effect in 2D-layered piezoelectric P-N heterojunction flexible photodetectors has been studied in greatThe piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible v...

Localized Excitons in Zn-Porphyrin Covalently Functionalized MoS2 and WS2

“…XPS, Raman, AFM, and PL spectroscopy showed that the loading of ZnP onto TMDs is low enough to consider the prepared material as a 0D−2D mix-dimensional heterostructure without surface aggregations of ZnP. ZnP-WS 2 shows a new peak at the NIR region with a long lifetime of 3.5 ns at 77.5 K with an excitation power of 17 W/cm 2 , corresponding to an interlayer exciton confined in 1 nm 2 . In addition, the photoresponse under 3.05 eV laser irradiation in ZnP-MoS 2 and ZNP-WS 2 was enhanced 10 times.…”

“…Furthermore, they possess high phonon-limited carrier mobility (predicted to be 410 cm 2 /V s at room temperature), and their carrier density can be tuned through gating. These excellent characteristics have led to flexible and/or transparent transistors and phototransistors with an on/off ratio larger than 10 7 . − …”

Synthesis Strategies and Nanoarchitectonics for High‐Performance Transition Metal Dichalcogenide Thin Film Field‐effect Transistors

“…[1][2][3][4][5][6][7] Among these materials, transition metal dichalcogenides (TMDC) have recently emerged as promising candidates for advanced semiconductor devices. [8,9] Composed of transition metal atoms sandwiched between two chalcogenide atoms (such as sulfur, selenium, or tellurium), TMDC possess remarkable electronic and optical properties that make them highly attractive for various electronic applications. [9][10][11] Specifically, TMDC exhibits high carrier mobility (> 100 cm 2 • V À 1 • s À 1 ), a thickness-dependent band-gap (ranging from 1.3 to 1.9 eV), strong optoelectrical properties, and flexible and transparent mechanical properties as two-dimensional (2D) materials.…”

“…Over the past several decades, the impact of high‐performance electronics on human life has been significantly enhanced by the advance of nanomaterials‐based electronics [1–7] . Among these materials, transition metal dichalcogenides (TMDC) have recently emerged as promising candidates for advanced semiconductor devices [8,9] . Composed of transition metal atoms sandwiched between two chalcogenide atoms (such as sulfur, selenium, or tellurium), TMDC possess remarkable electronic and optical properties that make them highly attractive for various electronic applications [9–11] .…”

Piezo‐Phototronic In2Se3 Nanosheets as a Material Platform for Printable Electronics toward Multifunctional Sensing Applications

“…[46] The attractive coupled piezo-phototronic properties of In 2 Se 3 outperform those of other 2D materials like graphene, black phosphorus, and MoS 2 , and thus pave the way for research on the upscaled fabrication of high-quality photodetectors [47][48][49][50] and force sensors based on its unique piezophototronic properties. [51,52] Regarding flexible photodetectors, notable cases were reported in which In 2 Se 3 was used in synergy with materials such as WSe 2, [53] rhombohedral (3R) MoS 2, [54] CH 3 NH 3 PbI 3 perovskite, [55] SnSe 2, [56] or used as the only active material. [57,58] Regarding In 2 Se 3 , available reports are based on techniques that are not cost effective and are labor intensive, such as transfer, [59,60] chemical vapor deposition (CVD), [51] or mechanical exfoliation on preconditioned substrate.…”