Emerging materials for spin–charge interconversion

Nan, Tianxiang; Ralph, Daniel; Tsymbal, Evgeny Y.; Manchon, Aurélien

doi:10.1063/5.0076924

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…Spin-orbitronics [1][2][3][4][5][6][7][8][9][10][11][12] is quickly becoming the most exciting frontier for magneto-electric and magneto-optical applications. The possibility to exploit spin-orbit coupling to inject and manipulate spin and charge currents in non-magnetic materials without an applied magnetic field is fostering the design of visionary devices with superior performances in terms of low energy consumption, operational speed, and information storage density.…”

Section: Introductionmentioning

confidence: 99%

Fermi Surface Topology and Rashba‐Edelstein Charge‐Spin Conversion in Lead‐Halide Perovskites

Filippetti

Wadhwa

Caddeo

et al. 2023

Advcd Theory and Sims

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The conversion of charge current into spin current by the Rashba–Edelstein effect enables the reciprocal control of electron charge and magnetization in magnetoelectric and magneto‐optical devices. The fundamentals of this effect are described in 3D lead‐halide perovskites: due to spin‐momentum locking, a strong charge‐spin conversion, widely tunable by the injected charge density, is envisaged. The analysis highlights the close relationship between charge‐spin conversion and the topological transition occurring from the low‐density, torus‐shaped Fermi surface (genus 1) to the high‐density, simply connected Fermi surfaces (genus 0). At room temperature, spin‐polarizations as large as ≈10% are obtained for input charge currents in the ≈102 to 106 Acm−2 range; at low temperature, almost full spin‐polarization can be achieved, owed to the large, impurity scattering‐limited mobilities. The results qualify lead‐halide perovskites as suitable materials for spin‐orbitronic applications.

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Section: Introductionmentioning

confidence: 99%

Fermi Surface Topology and Rashba‐Edelstein Charge‐Spin Conversion in Lead‐Halide Perovskites

Filippetti

Wadhwa

Caddeo

et al. 2023

Advcd Theory and Sims

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“…It produces out-of-plane spin polarization, which can be used as a spin generator to flip perpendicular magnet without external magnetic field. Therefore, the non-collinear AFM leads to high efficient spin-charge interconversion and high density integration [14][15][16][17], serving as the most attractive building block for non-volatile magnetic memories, due to its lowenergy consumption and high-speed writing [5,[18][19][20][21]. In particular, for traditional SOT devices [22][23][24][25], the spin Hall effect in heavy metals is used to generate the spin-orbit torque.…”

Section: Introductionmentioning

confidence: 99%

Tuning crystal orientation and chiral spin order in Mn₃Ge by annealing process and ion implantation

et al. 2023

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The non-collinear antiferromagnetic Weyl semimetal Mn3X (X=Ga, Ge, Sn) system has attracted a lot of attentions owing to its robust anomalous Hall effect (AHE), large spin Hall angle and small net magnetization at room temperature. The high spin-charge interconversion efficiency makes it a super candidate in topological antiferromagnetic spintronic devices, which could facilitate ultra-fast operation of high-density devices with low energy consumption. In this work, we have realized to obtain different chiral spin structures in Heusler alloy Mn3Ge thin films, which originate from different crystalline orientations. The high-quality (0002)- and (200)-oriented single phase hexagonal Mn3Ge films are achieved by controllable growth, annealing process and ion implantation. The various magnetic properties and AHE behaviors are observed along a and c crystal axes, equivalent to magnetic field in and out of the inverse triangular spin plane. The observation demonstrates the manipulation of crystal structure accompanied with chiral spin order in a non-collinear antiferromagnetic Mn3Ge film, which is induced by energy conversion and defect introduction. The in-situ thermal treatment induces crystal phase rotation up to 90° and robust AHE modulation, which is significantly important and highly desirable for flexible spin memory device applications.

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Electronic structure of ultrathin single-walled platinum nanotubes

Merinov,

Kulyamin,

D’yachkov

2024

Chemical Physics Letters

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Emerging materials for spin–charge interconversion

Cited by 5 publications

References 23 publications

Fermi Surface Topology and Rashba‐Edelstein Charge‐Spin Conversion in Lead‐Halide Perovskites

Fermi Surface Topology and Rashba‐Edelstein Charge‐Spin Conversion in Lead‐Halide Perovskites

Tuning crystal orientation and chiral spin order in Mn₃Ge by annealing process and ion implantation

Electronic structure of ultrathin single-walled platinum nanotubes

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Emerging materials for spin–charge interconversion

Cited by 5 publications

References 23 publications

Fermi Surface Topology and Rashba‐Edelstein Charge‐Spin Conversion in Lead‐Halide Perovskites

Fermi Surface Topology and Rashba‐Edelstein Charge‐Spin Conversion in Lead‐Halide Perovskites

Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation

Electronic structure of ultrathin single-walled platinum nanotubes

Contact Info

Product

Resources

About

Tuning crystal orientation and chiral spin order in Mn₃Ge by annealing process and ion implantation