2020
DOI: 10.1126/sciadv.aba4625
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Emergent quantum Hall effects below 50 mT in a two-dimensional topological insulator

Abstract: The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials, which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization in conventional quantum anomalous Hall systems makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in (Hg,Mn)Te quantum wells. First, a previously unidentified quantum Hall state emerges from t… Show more

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Cited by 35 publications
(36 citation statements)
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References 29 publications
(42 reference statements)
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“…It is also important to stress that the valence subbands obtained here also show the “ camel back ” profile 59 , 60 , thus also presenting an indirect gap defined by (see Fig. 1 b–e).…”
Section: Theoretical Resultssupporting
confidence: 55%
“…It is also important to stress that the valence subbands obtained here also show the “ camel back ” profile 59 , 60 , thus also presenting an indirect gap defined by (see Fig. 1 b–e).…”
Section: Theoretical Resultssupporting
confidence: 55%
“…This robust SIC-QHE phase in the graphene/CrOCl heterostructure prevails in much higher temperatures as compared to the QAHE systems so far reported, while the latter often requires temperatures of sub 2 K or even dilution fridge temperatures [35][36][37]. It also requires very relaxed experimental conditions as compared to such as doped (Hg,Mn)Te topological insulators quantum well, which is recently reported to show QH state below 50 mT at 20 mK [38]. It thus allows future applications in quantum metrology in the Système International d'unités [13,39].…”
Section: Gate Tuned Sic In the Qhe Regimementioning
confidence: 86%
“…This feature results from the inverted band ordering of the Γ 6 and Γ − 8 bands and hybridization with the Γ + 8 band which is located between them. 9,12,16 Such hybridization-induced van Hove singularities commonly occur in topological materials (see e. g. 17 ).…”
Section: Of Topological Insulatorsmentioning
confidence: 99%
“…We first calculate both electron, n e (T ), and hole, n h (T ), concentrations for the total charge densities n tot found in the experiment and electron temperatures T in the range of 0.4 K to 30 K. The intrinsic mobility for electrons µ e is calculated from the experimental low-temperature resistivity at zero heating current, where for simplicity we assume the holes to be localized. 16 The temperature-dependent resistivity can then be calculated as…”
Section: Of Topological Insulatorsmentioning
confidence: 99%