High quality stoichiometric magnetite (Fe 3 O 4 ) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces have been investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO 3 (001), MgAl 2 O 4 (001)and MgO(001), have been used for the preparation of epitaxial Fe 3 O 4 (001) films. By comparison, polycrystalline magnetite films were obtained on both single crystal Al 2 O 3 (0001) and amorphous Si/SiO 2 substrates. The thickness has been varied between 50 -400 nm. All films consist of nanocrystalline stoichiometric magnetite with very small strain (< 1%) and present the Verwey transition (T V ) between 110-120 K, i.e., close to bulk magnetite (122 K). In general, T V depends on both microstructure and thickness, increasing mainly as the thickness increases. Room temperature angulardependent measurements reveal an in-plane fourfold symmetry magnetic behavior for all films grown on (001)-oriented surfaces, and with the easy axes lying along the Fe 3 O 4 [010] and [100] directions. Remarkably, the fourfold magnetic symmetry shows up to 400 nm thick films. In turn, the films grown on single crystal Al 2 O 3 (0001) and on amorphous Si/SiO 2 surfaces display an isotropic magnetic behavior. In general, the coercive field (H C ) depends on microstructure and film thickness. The largest (lowest) H C value has been found for the thinner film grown on a single crystal SrTiO 3 (001) (amorphous Si/SiO 2 ) surface, which present the largest (lowest) strain (crystallinity). Moreover, the coercivity follows an inverse law with film thickness.Our results demonstrate that we can artificially control the magnetic behavior of stoichiometric IR-PLD grown Fe 3 O 4 films by exploiting substrate-induced anisotropy and thickness-controlled coercivity, that might be relevant to incorporate magnetite in future spintronic devices.