Emergence of strain induced two dimensional metallic state in ReS2

MoS2-ReS2 Heterojunctions from a Bimetallic Co-chamber Feeding Atomic Layer Deposition for Ultrasensitive MiRNA-21 Detection

“…The Hall effect measurements also indicate that the heterojunction structure can result in quite a lower resistance and higher electron mobility, which further verify the effect of Mo atoms in carrier mobility and resistivity (Figure F). The system becomes metallic (lower resistance and higher carrier mobility), which could result from the stress effect in the heterojunction, and is in line with the results of the peak position shift in XPS spectra.…”

“…The transformation from 2H-MoS 2 to 1T-MoS 2 may result from the stress that is caused by the coupling effect of 2H-MoS 2 and distorted 1T-ReS 2 , which also leads to the metalloid transition of the system. 29 The combination manner of MoS 2 with ReS 2 can be observed by EDS elemental mappings of RM-3 (Figure S4), which indicates that Re and Mo elements are evenly distributed on the ITO surface, confirming that RM-3 prepared by the bimetallic co-chamber feeding ALD is composed of MoS 2 and ReS 2 . The atomic percentage of Re, Mo, and S are 30.9, 10.1, and 59%, respectively.…”

“…In addition, the peak at 22.4° is attributed to the quartz glass sample holder. The transformation from 2H-MoS 2 to 1T-MoS 2 may result from the stress that is caused by the coupling effect of 2H-MoS 2 and distorted 1T-ReS 2 , which also leads to the metalloid transition of the system …”

Atomic Layer Deposition-Made MoS2–ReS2 Nanotubes with Cylindrical Wall Heterojunctions for Ultrasensitive MiRNA-155 Detection

“…Furthermore, such weak or even disappeared E 2g 1 mode in MoS 2 −ReS 2 -HNTs verifies the existence of MoS 2 with the 1T′ phase, while the existence of the 2H phase is confirmed by lattice characterization (Figures 4d and 5d). 48 The formation of the metastable 1T′ phase may result from the stress that is caused by the coupling effect of MoS 2 and ReS 2 , 51 while the formation of the semiconducting 2H phase can be attributed to the stability of the 2H phase in the sample with more Mo atoms. 52 Accordingly, Raman peaks at 376 and 404 cm −1 correspond to E 2g 1 and A 1g vibration modes in MoS 2 , respectively, 53 which begin to appear in RM2 (Figure 5d).…”

Inlaid ReS2 Quantum Dots in Monolayer MoS2

“…As elucidated by the atomic structure and lattice strain analyses, smaller ReS 2 nanodots are accompanied by larger lattice-confinement strains. At the same time, compressive strains are known to reduce the bandgap of 1L ReS 2 , which is originally narrower than 1L MoS 2 (Figure S2c), or even cause metallization of ReS 2 . , Moreover, 2H phase ReS 2 is also predicted to have a metallic nature . Therefore, the smaller ReS 2 nanodots are expected to have deeper potential wells than the larger ones, although the nanosized ReS 2 is no longer characterized by the Bloch states in perfect ReS 2 crystals.…”