Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

Załuska‐Kotur, Magdalena A.; Krzyżewski, Filip; Krukowski, S.

doi:10.1016/j.jcrysgro.2012.01.033

Cited by 20 publications

(13 citation statements)

References 37 publications

(73 reference statements)

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“…The terrace is relatively wide in the deep intersection area while it is very narrow in the two side walls. However, the amplitude of the wavy structure should reach a maximum and become stable because of the energy balance of the step edges [15].…”

Section: Resultsmentioning

confidence: 99%

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Zhou

Liu

Ikeda

et al. 2015

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Zhou

Liu

Ikeda

et al. 2015

Journal of Crystal Growth

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“…2). The step-step communication appears to be important for annealed two-dimensional system, similarly as in the case of grown crystal 38,39 .…”

Section: Kinetic Monte Carlo Simulations Of Step Bunching Process Dur...mentioning

confidence: 89%

“…Below we show step bunching process realized in the MC simulated process within the lattice gas model [37][38][39] . We provide kinetic MC simulations for a system of GaN(0001) surface symmetry.…”

Section: Kinetic Monte Carlo Simulations Of Step Bunching Process Dur...mentioning

confidence: 99%

Step bunching process induced by the flow of steps at the sublimated crystal surface

Załuska‐Kotur

Krzyżewski

2012

Journal of Applied Physics

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Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method and compared with the model based on Burton-Carbera-Frank equations. Successive stages of surface pattern evolution during high temperature sublimation process are discussed. At low sublimation rates clear, well defined step bunches form. The process happens in the absence or for very low Schwoebel barriers at the ideal surface. Bunches of several steps are well separated, move slowly and are rather stiff. Character of the process changes for more rapid sublimation process where double step formations become dominant and together with meanders and local bunches assemble into the less ordered surface pattern. Solution of the analytic equations written for one dimensional system confirms that step bunching is induced by the particle advection caused by step-flow anisotropy. This anisotropy becomes important when due to the low Schwoebel barrier both sides of step are symmetric. Simulations show that in the opposite limit of very high Schwoebel barrier steps fracture and rough surface builds up.

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“…striations terraces on the direction [ 10 ] GaN(0001)surface growth in rich nitrogen have been reported [11] . Shen [12] investigated single and multi-layer terraces by using an atomic force microscope, including striation on [11 2 0] direction and "z" type terraces on [10 1 0] and [01 1 0] direction respectively.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of Line and Terraces Defects on GaN(0001) Surface

Liang¹,

Qiu²,

Huang³

et al. 2015

Proceedings of the 2015 6th International Conference on Manufacturing Science and Engineering

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Emergence of regular meandered step structure in simulated growth of GaN(0001) surface

Cited by 20 publications

References 37 publications

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Step bunching process induced by the flow of steps at the sublimated crystal surface

Theoretical Study of Line and Terraces Defects on GaN(0001) Surface

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