Electron transfer
at a donor–acceptor quantum dot–metal
oxide interface is a process fundamentally relevant to solar energy
conversion architectures as, e.g., sensitized solar cells and solar
fuels schemes. As kinetic competition at these technologically relevant
interfaces largely determines device performance, this Review surveys
several aspects linking electron transfer dynamics and device efficiency;
this correlation is done for systems aiming for efficiencies up to
and above the ∼33% efficiency limit set by Shockley and Queisser
for single gap devices. Furthermore, we critically comment on common
pitfalls associated with the interpretation of kinetic data obtained
from current methodologies and experimental approaches, and finally,
we highlight works that, to our judgment, have contributed to a better
understanding of the fundamentals governing electron transfer at quantum
dot–metal oxide interfaces.