Abstract:Transition metal chalcogenides (TMCs) have attracted increasing attention due to their rich polymorphs and unique properties, i.e. pressure-induced superconductivity. In this work, we systematically investigated phase diagram, stability, and superconducting...
“…After graphene and transition-metal dichalcogenides, [1][2][3][4][5] black phosphorus (BP) has emerged as an important two dimensional (2D) material. [6][7][8] The buckled honeycomb BP structure exhibits a tunable bandgap ranging from B0.3-2.0 eV from bulk materials to monolayers.…”
High pressure technique has attracted massive attention in investigation of structural phase transition and unexpected physical properties of layered 2D materials. Germanium phosphides possess similar layered structure with black phosphorus...
“…After graphene and transition-metal dichalcogenides, [1][2][3][4][5] black phosphorus (BP) has emerged as an important two dimensional (2D) material. [6][7][8] The buckled honeycomb BP structure exhibits a tunable bandgap ranging from B0.3-2.0 eV from bulk materials to monolayers.…”
High pressure technique has attracted massive attention in investigation of structural phase transition and unexpected physical properties of layered 2D materials. Germanium phosphides possess similar layered structure with black phosphorus...
“…layered materials have recently gained attention due to their exceptional electronic, optoelectronic, and semiconducting properties. [17][18][19][20][21][22][23][24][25] 2D TMD heterostructures have a weak interlayer bond, a quantum effect, and tunneling, so they have attracted a large amount of research attention. [26][27][28][29][30][31] These three characteristics set them apart from the traditional 3D bulk materials, which are causing increased interest in them.…”
The bipolar junction transistor, which is also known as a BJT, has become an essential component for many modern circuits that are used for high-speed computing and communication, which is...
“…Recent studies have brought attention to various novel superconducting Ta-S/Se compounds. [78][79][80] In light of these findings, we aim to further investigate the impact of different VIA group elements on the T c value within the prototype structure by substituting the O atom in Pm% 3n TaO 3 with S and Se atoms at 300 GPa (Fig. S12, ESI †).…”
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