Emergence of Continuous Czochralski (CCZ) Growth for Monocrystalline Silicon Photovoltaics

Kurinec, Santosh; Bopp, C.D.; Han, Xu

doi:10.1002/9781119407690.ch1

Cited by 5 publications

(5 citation statements)

References 9 publications

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“…Furthermore, many of these emerging technologies are inherently sustainable, relying on the use of abundant and (mostly) nontoxic raw materials. 6 One important feature of the materials employed in these emerging technologies is that their optical and electronic properties can be tuned through synthesis [7][8][9][10] . This, on the one hand, is routinely used in order to improve device power conversion efficiency and stability, for instance, in multi-cation perovskite solar cells 11 or ternary organic photovoltaics.…”

Section: Introductionmentioning

confidence: 99%

Spectrum on demand light source (SOLS) for advanced photovoltaic characterization

Casademont-Viñas,

Gibert-Roca,

Campoy-Quiles

et al. 2023

Review of Scientific Instruments

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We report a multi-purpose spectrum-on-demand light source (SOLS), conceived primarily but not exclusively for the multiple and advanced characterization of photovoltaic (PV) materials and devices. The apparatus is a spectral shaper illumination device, providing a tunable and spectrally shaped light beam produced by modulating the intensity and/or wavelength range of a primary light source. SOLS stands out from the state of the art because it produces almost any spectrum on demand and delivers two types of output: a spectrally shaped and spatially homogeneous beam over its cross section for areal illumination or a spatially and spectrally split beam into its wavelength components, a unique capability suited to characterize lateral-tandem (Rainbow) solar cells. The tuneability from broadband to narrowband illumination enables two characterization devices into one, namely, a solar simulator for the determination of the power conversion efficiency and an external quantum efficiency measuring system. We expect the SOLS setup to accelerate material screening, enabling the discovery and optimization of novel multi-component materials and devices, in particular for emergent PV technologies like organic, metal halide perovskites, or multi-junction geometries, as well as novel PV applications such as indoors, building integrated, or agrivoltaics, among others.

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Section: Introductionmentioning

confidence: 99%

Spectrum on demand light source (SOLS) for advanced photovoltaic characterization

Casademont-Viñas,

Gibert-Roca,

Campoy-Quiles

et al. 2023

Review of Scientific Instruments

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show abstract

“…In fact, uncompensated n-type Si does not suffer from boron-oxygen defect 32 and the capture cross-section of most metal contaminants such as Fe, Ni and Cr, are much lower in n-type Si than in p-type Si 33,34 . In addition, the non-uniformity in distribution of dopants can be overcome by replenishment of un-doped Si in a continuous Czochralski (Cz) Si crystallization system 35,36 . It must be mentioned however, that in this technique, the melt and therefore the subsequent crystal are expected to get richer in impurity content due to the segregation coefficient of most of the metallic contaminants in silicon being much less than unit 37 .…”

Section: Introductionmentioning

confidence: 99%

“…33,34 In addition, the nonuniformity in the distribution of dopants can be overcome by replenishment of undoped Si in a continuous Czochralski (Cz) Si crystallization system. 35,36 It must be mentioned, however, that in this technique, the melt and therefore the subsequent crystal are expected to get richer in impurity content due to the segregation coefficient of most of the metallic contaminants in silicon being much less than the unit. 37 Nevertheless, further improvements in material quality, particularly of low-cost substrates and reduction in the device processing cost, are still necessary.…”

Section: ■ Introductionmentioning

confidence: 99%

“…However, there has been significant progress in understanding and overcoming the challenges of crystallization and processing of n-type Si for commercial applications in PV. In fact, uncompensated n-type Si does not suffer from boron–oxygen defect, and the capture cross-section of most metal contaminants such as Fe, Ni and Cr, are much lower in n-type Si than in p-type Si. , In addition, the nonuniformity in the distribution of dopants can be overcome by replenishment of undoped Si in a continuous Czochralski (Cz) Si crystallization system. , It must be mentioned, however, that in this technique, the melt and therefore the subsequent crystal are expected to get richer in impurity content due to the segregation coefficient of most of the metallic contaminants in silicon being much less than the unit . Nevertheless, further improvements in material quality, particularly of low-cost substrates and reduction in the device processing cost, are still necessary.…”

Section: Introductionmentioning

confidence: 99%

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Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Kivambe

Haschke

Horzel

et al. 2019

ACS Appl. Energy Mater.

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We report independently confirmed 22.15% and record 22.58% power conversion efficiencies, for thin (130 μm-140 μm) p-and n-type mono-like Si solar cells, respectively. We comparatively assessed advanced n-type and p-type mono-like silicon wafers for potential use in low-cost high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or ptype), wafer position in the ingot, drive-in temperature and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.

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“…In addition to direct backbone fluorination, several studies have examined the effects of introducing fluorinated pendant groups of semifluorinated alkyl chains. , Such modifications lead to favorable microstructural ordering and remarkably high electron mobilities. There is a growing focus on the electrostatics of pendant groups (i.e., permanent dipoles) in organic materials, from enhancing the dielectric constant of OPV materials , to stabilizing dopants in thermoelectrics . A striking manifestation of the strong dipole moment created by C–F bonds is ferroelectricity in poly(vinylidene difluoride), which arises from the alignment of CF 2 groups enabled by the −CH 2 CF 2 – repeat-unit. − …”

Section: Introductionmentioning

confidence: 99%

Synthesis of a Hominal Bis(difluoromethyl) Fragment

2019

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This paper describes the synthesis of a discrete unit of hominal bis( gem -CF 2 ). The controlled introduction of fluorine atoms is a powerful synthetic tool to introduce dipole moments with minimal impact to sterics. Poly(vinylidene difluoride) is a striking example of the influence of fluorine atoms, which impart ferroelectric behavior from the alignment of the dipole moments of CF 2 units; however, it is prepared via direct polymerization of vinylidene difluoride. Thus, a different synthetic pathway is required to produce synthons containing discrete numbers of CF 2 groups in a hominal relation to each other. We found out that, in the case of short chains, the consecutive deoxofluorination of sequentially introduced keto groups is inefficient, as it requires harsh conditions and decreasing yields at each step. To solve this problem, we combined the selective desulfurative fluorination of dithiolanes with pyridinium fluoride and the deoxofluorination of keto groups with morpholinosulfur trifluoride. This strategy is highly reproducible and scalable, allowing the synthesis of the hominal bis( gem -CF 2 ) fragment as a shelf-stable tosylate, which can be used to install discrete chains of hominal bis( gem -CF 2 ) on a variety of synthons and monomers.

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Emergence of Continuous Czochralski (CCZ) Growth for Monocrystalline Silicon Photovoltaics

Cited by 5 publications

References 9 publications

Spectrum on demand light source (SOLS) for advanced photovoltaic characterization

Spectrum on demand light source (SOLS) for advanced photovoltaic characterization

Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Synthesis of a Hominal Bis(difluoromethyl) Fragment

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