Emeraldicene as an Acceptor Moiety: Balanced‐Mobility, Ambipolar, Organic Thin‐Film Transistors

Mohebbi, Ali; Yuen, Jonathan D.; Fan, Jian; Munoz, Cedric; Wang, Ming feng; Shirazi, Rahau S.; Seifter, Jason; Wudl, Fred

doi:10.1002/adma.201102726

Cited by 104 publications

(51 citation statements)

References 35 publications

(21 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The AFM height images show that the surface root-mean-square (RMS) roughness for PTZ-CN, PTZO-CN and PTZDO-CN is 0.579 nm, 1.975 nm and 4.82 nm, respectively, which become increasingly rougher as the sulphur oxidation state increases. 16 Therefore, the ON/OFF current ratio of the device based on PTZO-CN is high, and the device is in its low-conductivity state ("0" state) at low voltage (Fig. Moreover, a smoother morphology may also prevent the aluminum (Al) from penetrating into the organic lm during the vacuum deposition of the aluminum electrode.…”

Section: Morphology Of Lms and Molecular Packingmentioning

confidence: 99%

Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performance

et al. 2015

View full text Add to dashboard Cite

Three symmetrical conjugated small molecules derived from phenothiazine (PTZ), PTZ-CN, PTZO-CN and PTZDO-CN, were designed and successfully synthesized for multilevel memory data storage. By reserving the terminal electron-accepting cyano moiety, the sulphur atom in phenothiazine (PTZ) was adjusted to different oxidation states, such as sulfide, sulfoxide, and sulfone, to tune the electron-accepting ability (J. Liu et al., Chem. Mater., 2008, 20, 4499). Therefore, a differentiated trap depth was achieved between the central sulphur-containing group and the terminal cyano groups when the molecules were charged.Devices based on PTZO-CN exhibited excellent ternary memory behaviour, while those based on PTZ-CN or PTZDO-CN only showed binary memory characteristics. Therefore, it is a viable approach to easily obtain multilevel memory organic materials by adjusting the difference between two electronwithdrawing groups in the conjugated molecular backbone through gradual oxidation of the central sulphur atom to achieve ternary memory performance. † Electronic supplementary information (ESI) available: The compositions of the small molecules, the memory device, TGA, energy levels for the three functional moieties, DFT molecular simulation results, stability tests of the devices, I-V curve. See a The data were calculated using the equation: band gap ¼ 1240/l onset . b The HOMO energy levels were calculated from cyclic voltammetry and were referenced to ferrocene (4.8 eV). c The LUMO energy levels were calculated from the HOMO level and the optical band gap.

show abstract

Section: Morphology Of Lms and Molecular Packingmentioning

confidence: 99%

Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performance

et al. 2015

View full text Add to dashboard Cite

show abstract

“…1−3 Ambi-OFETs can be fabricated using one ambipolar material 4,5 or by combining two unipolar materials (p-and n-type). 6,7 The fabrication of highly efficient ambipolar devices using one ambipolar organic material is still being researched, because achieving balanced p-and n-type charge transport in ambient conditions is very difficult with one organic material.…”

Section: ■ Introductionmentioning

confidence: 99%

Laterally-Stacked, Solution-Processed Organic Microcrystal With Ambipolar Charge Transport Behavior

Shim

Cho

Yang

et al. 2014

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

We report the formation of laterally stacked ambipolar crystal wire for high-mobility organic field-effect transistors (OFETs), along with a simple logic circuit through a solution process. A soluble pentacene derivative, 6,13-bis(triisopropylsilylethynyl)pentacene (Tips-pentacene), and N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) were used as p-type and n-type organic semiconductors, respectively. The laterally stacked ambipolar crystal wire is made up of Tips-pentacene and PTCDI-C8 crystals in a structure of Tips-pentacene/PTCDI-C8/Tips-pentacene (TPT). The inner part of the crystal is made up of PTCDI-C8, and Tips-pentacene is present on both sides. These TPT crystals exhibit typical ambipolar charge transport behavior in organic electronic devices, which show very balanced hole and electron mobility as high as 0.23 cm(2)/V·s and 0.13 cm(2)/V·s, respectively. Static and dynamic operational stability of the device is investigated by measuring the device performance as a function of storage time and applying voltage pulse, respectively, and it shows good air stability. In addition, a simple logic circuit based on the TPT crystal wire has been fabricated, and the static and dynamic performance has been evaluated. The results indicate that the TPT crystals are potentially useful for miniaturized organic electronic devices.

show abstract

“…Previous research for balancing electron and hole current has focused on designing new materials 40–43 or devising a new approach to blend 44, 45 or stack 46, 47 two materials. While such approaches are very promising, the balance between hole and electron currents may vary depending on the device structure 40, 43 or manufacturing process 42 . Therefore, there is a great need to more clearly understand and control the p-type and n-type charge transport properties through a comprehensive physical analysis.…”

Section: Introductionmentioning

confidence: 99%

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Yoo

Ghittorelli

Lee

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

show abstract

Emeraldicene as an Acceptor Moiety: Balanced‐Mobility, Ambipolar, Organic Thin‐Film Transistors

Cited by 104 publications

References 35 publications

Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performance

Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performance

Laterally-Stacked, Solution-Processed Organic Microcrystal With Ambipolar Charge Transport Behavior

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Contact Info

Product

Resources

About