Embedding electronic circuits by laser direct-write

Piqué, Alberto; Mathews, Scott A.; Pratap, Bhanu; Auyeung, R. C. Y.; Karns, B. J.; Lakeou, S.

doi:10.1016/j.mee.2006.06.004

Cited by 52 publications

(27 citation statements)

References 8 publications

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“…Also, the bottom surfaces of the devices are passivated with thermal oxide, thereby minimizing any infl uence of the substrate on their performance. When implemented using foundry wafer fabrication facilities for the devices and advanced inkjet, [ 20 ] electrohydrodynamic, [ 21 , 22 ] direct-write, [ 23 ] or alternative printing techniques [ 24 ] for the interconnect, these procedures have the potential to bypass the need for any additional specialized processing technology for large-area electronics, or other nonwafer applications such as those that demand fl exible, stretchable, or curvilinear substrates.…”

Section: Discussionmentioning

confidence: 99%

Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates

Chung

Kim

et al. 2011

Adv Funct Materials

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A new class of thin, releasable single‐crystal silicon semiconductor device is presented that enables integration of high‐performance electronics on nearly any type of substrate. Fully formed metal oxide–semiconductor field–effect transistors with thermally grown gate oxides and integrated circuits constructed with them demonstrate the ideas in devices mounted on substrates ranging from flexible sheets of plastic, to plates of glass and pieces of aluminum foil. Systematic study of the electrical properties indicates field‐effect mobilities of ≈710 cm2 V−1 s−1, subthreshold slopes of less than 0.2 V decade−1 and minimal hysteresis, all with little to no dependence on the properties of the substrate due to bottom silicon surfaces that are passivated with thermal oxide. The schemes reported here require only interconnect metallization to be performed on the final device substrate, which thereby minimizes the need for any specialized processing technology, with important consequences in large‐area electronics for display systems, flexible/stretchable electronics, or other non‐wafer‐based devices.

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Section: Discussionmentioning

confidence: 99%

Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates

Chung

Kim

et al. 2011

Adv Funct Materials

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“…Smaller structures, such as nanodroplets, can be also transferred (Banks et al, 2006) and even an entire microstructure or a microdevice could be deposited by LIFT (Piqué et al, 2006). This technique can be efficiently used as a microprinting method.…”

Section: Femtosecond Laser Induced Forward Transfermentioning

confidence: 99%

Ultrashort Pulsed Lasers – Efficient Tools for Materials Micro-Processing

Zamfirescu¹,

Ulmeanu²,

Bunea³

et al. 2011

Recent Advances in Nanofabrication Techniques and Applications

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“…This laser printing process has been used with great success in the fabrication of sensors, microbatteries, interconnects, antennae and solar cells [6,7,8,9]. More recently, LDW techniques have been utilized in the fabrication of embedded electronic devices and circuits, were interconnects were laser-printed onto the contact pads of bare die without damaging the thin metal layers [10,11]. It is also possible to use the LDW technique to transfer entire single devices such as the semiconductor bare die embedded in our previous work, inside a pocket or recess in a substrate, thus performing the same function of pickand-place machines used in circuit board assembly, as described in this paper.…”

Section: Laser-based Direct-write Processesmentioning

confidence: 99%

Use of Laser Direct-Write in Microelectronics Assembly

Mathews¹,

Piqué

2007

JLMN

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The use of a laser-based direct-write (LDW) process is presented for the transfer of unpackaged semiconductor bare die for microelectronics assembly applications. Previous work using LDW techniques at the Naval Research Laboratory had been aimed towards demonstrating the use of a laser-based microfabrication process for direct-writing the materials required for the fabrication of microelectronic components such as interconnects, passives, antennas, sensors and power sources. Recently, we have applied the LDW process in forward-transfer mode to the release and transfer of single devices, such as semiconductor bare die, inside a pocket or recess in a substrate, thus performing the same function as pick-and-place machines used in circuit board assembly. The use of this technique is ideally suited for the assembly of microelectronic components and systems while allowing the overall circuit design and layout to be easily modified or adapted to any specific application or form factor. This paper presents examples of how the LDW process can be used as an effective laser die transfer tool and analysis of the laser-driven release process as applied to various types of silicon bare dies.

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Embedding electronic circuits by laser direct-write

Cited by 52 publications

References 8 publications

Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates

Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates

Ultrashort Pulsed Lasers – Efficient Tools for Materials Micro-Processing

Use of Laser Direct-Write in Microelectronics Assembly

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