Abstract:The challenge in the research is to develop a material thickness measurement method to monitor oxide polishing by Chemical-Mechanical Planarization (CMP) in the Shallow Trench Isolation (STI). The underlying aim is to build a statistical regulation model for the polishing time on one platen (the two others platens are monitored by an endpoint signal). In addition to the process parameters (head sweep, platen, and head rotation velocity), input and output polished material thicknesses data are essential to buil… Show more
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