Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2

Joshi, Kapil U.; Kabiraj, D.; Narsale, A.M.; Avasthi, D.K.; Warang, Trupti N.; Kothari, D.C.

doi:10.1016/j.surfcoat.2009.02.042

Cited by 10 publications

(3 citation statements)

References 13 publications

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“…[1][2][3][4][5][6][7] The formation of nanocrystals has been reported using various approaches, e.g., ion implantation of Si or Ge in SiO 2 , [8][9][10][11] e-beam evaporation, 12 co-sputtering deposition of Si and/or Ge and SiO 2 , [13][14][15][16] and plasma-enhanced chemical vapor deposition. 17 These procedures usually end with an annealing step, necessary to form the nanocrystals, carried out at temperatures of 1000°C or higher and for times of around 1 h, conditions which often represent a high thermal budget.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

Rodrı́guez

Prieto

et al. 2010

Journal of Elec Materi

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Si 0.6 Ge 0.4 nanocrystals, of diameter <5 nm, embedded in SiO 2 in the form of single layers (2.1 9 10 12 nanoparticles cm -2 ) and five-period multilayers (above 10 13 nanoparticles cm -2 ) have been fabricated using a low-thermalbudget process consisting of deposition by low-pressure chemical vapor deposition and crystallization by rapid thermal annealing at several temperatures and for different times. The crystallization process was monitored by Raman spectroscopy and transmission electron microscopy. The loss of integrity and compositional changes of the nanoparticles during the annealing process were characterized by Rutherford backscattering spectrometry. During the annealing process, crystallization and Ge out-diffusion have been observed to compete with each other. Annealing of samples with nanoparticles of 4.6 nm diameter at low temperature (750°C) yields poor crystallization of the nanoparticles and causes the Ge to leave them by a pure diffusive mechanism, thus destroying their integrity. At higher temperatures ( ‡800°C), crystallization takes place in a short period of time (<30 s) and diffusion from the crystallized material is initially hindered. For samples with nanoparticles of 3.3 nm diameter, partial crystallization is detected at 800°C and 900°C and the crystalline quality is improved in both cases as the annealing time increases. Also, the detection capabilities of the Raman spectroscopy system for the detection of a certain density of SiGe nanocrystals of given diameter and composition have been explored and the lower limit estimated.

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Section: Introductionmentioning

confidence: 99%

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

Rodrı́guez

Prieto

et al. 2010

Journal of Elec Materi

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“…Sputtering is a procedure in which nanoparticles are created by bombarding the target metal with high energy [ 1 ]. Atom beam sputtering involves three basic steps: migration of atoms from the surface of materials, nucleation and growth of nanoparticles, and absorption onto another material in an electric field [ 22 , 23 , 24 ]. Magnetron sputtering involves sputtering in a magnetic field, in which one or more materials are deposited on the surface of another material such as metal or ceramics through a high-rate vacuum coating technique [ 25 , 26 , 27 , 28 , 29 ].…”

Section: Methods Of Synthesizing Alloy Nanoparticlesmentioning

confidence: 99%

Synthesis, Properties, and Biological Applications of Metallic Alloy Nanoparticles

Huynh

Pham

Kim

et al. 2020

IJMS

134

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Metallic alloy nanoparticles are synthesized by combining two or more different metals. Bimetallic or trimetallic nanoparticles are considered more effective than monometallic nanoparticles because of their synergistic characteristics. In this review, we outline the structure, synthesis method, properties, and biological applications of metallic alloy nanoparticles based on their plasmonic, catalytic, and magnetic characteristics.

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“…The fabrication of SiGe nanoparticles has been the object of experimental and theoretical research studies for many years. − A. Kling deposited a multilayer structure with five periods of amorphous SiGe nanoparticles/SiO 2 layers in different thicknesses by low-pressure chemical vapor deposition and annealed to crystallize. Joshi reported the formation of SiGe crystalline nanoparticles embedded in the SiO 2 film by the atom beam sputtering method in conjunction with rapid thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Hidden State of Si₅₀Ge₅₀ Nanoparticles During Rapid Solidification

Zheng

Xiao

Tian

et al. 2021

Crystal Growth & Design

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The structure determines the property of materials, while observing the microstructure is a challenge in experiments. With molecular dynamics (MD) simulation, the solidification of Si50Ge50 nanoparticles is extensively investigated in terms of the potential energy, the pair distribution function, and several parameters based on the largest standard cluster analysis. It is found that Si50Ge50 nanodroplets is cooled into a crystal without element segregation through four stages, including the initial liquid, the rapid growth, the critical-nuclei crystalline (CNC) state, and the steady growth. The saturation of the covalent bond is satisfied before the directionality in the crystallization process. Interestingly, at the CNC state, the average size of the crystalline structure is independent of temperature but depends on the cooling rate; and the heritability of basic crystalline atoms is not over 50% until the end of the CNC state. These results deepen the understanding of the structural evolution during the rapid cooling of Si50Ge50 nanodroplets and provide useful guidelines for the preparation of alloy nanodevices.

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Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2

Cited by 10 publications

References 13 publications

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

Synthesis, Properties, and Biological Applications of Metallic Alloy Nanoparticles

Hidden State of Si₅₀Ge₅₀ Nanoparticles During Rapid Solidification

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Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2

Cited by 10 publications

References 13 publications

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

Synthesis, Properties, and Biological Applications of Metallic Alloy Nanoparticles

Hidden State of Si50Ge50 Nanoparticles During Rapid Solidification

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Hidden State of Si₅₀Ge₅₀ Nanoparticles During Rapid Solidification