Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances

Farahzad, Elham; Naderi, Ali

doi:10.1007/s10854-022-08816-3

J Mater Sci: Mater Electron

2022

DOI: 10.1007/s10854-022-08816-3

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Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances

Elham Farahzad

Ali Naderi²

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Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances

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References 21 publications

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