EM lifetime improvement of Cu damascene interconnects by p-SiC cap layer

Hatano, M.; Usui, Tunemaru; Shimooka, Y.; Kaneko, H.

doi:10.1109/iitc.2002.1014937

Cited by 16 publications

(11 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is worth noting that the main precursors of A α-SiCN:H and N α-SiCN:H films are 3MS and 4MS, respectively, and the structure of N α-SiCN:H film in principle contains more methyl bonds (-CH 3 ) than A α-SiCN:H film which should lead to a lower dielectric constant. However, as illustrated in Table 1 , the N/Si gas ratios of A α-SiCN:H film and N α-SiCN:H film are 1.84 and 2.06, respectively [ 6 ]. It implies that more N atoms react with methyl-silane during N α-SiCN:H film deposition.…”

Section: Resultsmentioning

confidence: 99%

“…To prevent Cu from diffusion into the dielectric material, Cu must be sealed using diffusion barriers. A dielectric diffusion barrier layer must be deposited on Cu wires to seal the Cu and to serve as the etch stop layer during the via etch of the next metal layer [ 6 , 7 ]. In 90 nm and 65 nm technology, dual layers of composite α-SICN:H/TEOS oxide were used as a Cu diffusion barrier.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

Chen

Wang

et al. 2012

Materials

View full text Add to dashboard Cite

Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs) showed that 3MS α-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the α-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O) substituted TEOS oxide capped on 4MS α-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

Chen

Wang

et al. 2012

Materials

View full text Add to dashboard Cite

show abstract

“…It's found that P-SIC caps show improved EM life times compared to P-SiN [3] . In contrast, Martin et al [4] observed a similar EM behavior for both SiN and SiCN caps, but obtained a significant improvement when applying a plasma pre-clean treatment before the SiCN cap-layer deposition.…”

Section: Introductionmentioning

confidence: 95%

The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu Interconnects

Cao¹,

Xing

Xu³

et al. 2011

ECS Trans.

View full text Add to dashboard Cite

The influence of the SiN cap-layer deposition process including different pre-clean treatments on the voltage breakdown (VBD) and electromigration (EM) behavior of copper dual damascene metallization has been studied. A remarkable improvement for voltage breakdown and electromigration were revealed depending primarily on the pre-clean treatment before cap-layer deposition rather than the deposition process itself.On one hand an "aggressive" pre-clean treatment yields improved Cu/SiN-interface properties with higher electromigration failure times and activation energies (1.23 ... 1.27eV). On the other hand these pre-clean treatments were found to induce voltage breakdown failures because of the redundant Cu/Cu 2+ or Copper Silicide defects induced in the Dielectric (FSG)/SiN-interface during the plasma pre-clean treatment. The micro damage on surface and copper Silicide was found to increase with the pre-clean intensity. In contrast, No VBD risk is related to "less aggressive" pre-clean treatments.The results indicate the need to adjust the SIN cap-layer process parameters with respect to both VBD&EM performance to meet the overall reliability requirements. INTRODUCTIONThe interface between the copper and the capping layer is to be the dominant diffusion pathway in copper dual damascene interconnects. Therefore, the properties of this particular interface play a key role for wear-out mechanisms such as electro-migration and voltage breakdown, limiting the life time of complex integrated copper interconnect systems.SIN-and Sic-based films are widely used as capping materials for copper interconnects. It has been published in several studies that the EM life time depends on the adhesion behavior, i.e. the sticking coefficient between cap-layer and copper surface. Good adhesion and hence large EM life times are enabled by a tightly bonded interface which suppresses the migration along this pathway. In contrast, a poorly adhering interface would correspond with enhanced diffusion and lower EM life times

show abstract

“…Effect of SiC cap layer on electromigration was studied previously [20]. In this study it was observed that SiC cap layer leads to higher MTF as compared to SiN cap during electromigration test and has better adhesion than SiN.…”

Section: Interfacial Electromigration and Adhesionmentioning

confidence: 80%

“…Electromigration mechanisms in Cu and issues with damascene interconnect structures are also being studied but conflicting results are reported and electromigration mechanism in dual-damascene interconnects is not studied in depth [1]. The problem of electromigration is further perplexed by the introduction of new low-k materials having significantly different thermo-mechanical properties than conventional SiC>2 dielectric [12][13][14][15][16][17][18][19][20]. The fundamental electromigration-induced voiding mechanism in Cu damascene needs to be understood to address these issues.…”

Section: Motivationmentioning

confidence: 99%

Study of electromigration-induced voiding mechanisms in Cu interconnects

Vairagar¹

View full text Add to dashboard Cite

show abstract

EM lifetime improvement of Cu damascene interconnects by p-SiC cap layer

Cited by 16 publications

References 1 publication

A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu Interconnects

Study of electromigration-induced voiding mechanisms in Cu interconnects

Contact Info

Product

Resources

About