All-inorganic CsPbI 3 has recently emerged as a superstar in the photovoltaic field due to its excellent photoelectric properties, such as high absorption coefficient, decent carrier mobility, and high defect tolerance. [1][2][3][4] Together with its solution processability and thermal stability, these attributes suggest CsPbI 3 as a highly competitive candidate for commercial application. Furthermore, the realization of a high-efficiency and stable photovoltaic device is fundamentally required and lowcost fabrication is greatly desired.Defects in semiconductor materials play some intricate roles: shallow defect levels with activation energies lower than the thermal energy K B T can tune the conductivity type and carrier concentration, while deep defect states often capture the carrier and serve as recombination centers due to their localization. [5][6][7][8] The superior photoelectric properties and high defect tolerance of all-inorganic perovskite semiconductors are ascribed to their low concentration of deep sub-bandgap levels and have allowed the power conversion efficiency (PCE) to rapidly advance to 20.37% in just 5 years. [9][10][11][12] Further progress in the device performance depends on the careful adjustment of defect formation, especially of the deep-level defects, which are regarded as the nonradiative channels. In the case of all-inorganic CsPbI 3 semiconductor material, 12 kinds of possible intrinsic point defects will be produced during the film growth process, including vacancies (V Cs , V Pb , and V I ), interstitials (Cs i , Pb i , and I i ), cation substitutions (Cs Pb and Pb Cs ), and antisite substitutions (Cs I , Pb I , I Cs , and I Pb ). [13,14] Among these, most vacancy defects are assigned to shallow defect states, while the interstitial and antisite defects often create deep electronic levels far from the valance and conduction band edges, which are responsible for the Shockley-Read-Hall (SRH) recombination centers. These intrinsic defects are inevitable in solution-processed polycrystalline materials. The formation of defect states has been speculated to bring out the instability of assembled devices and the mismatch of PCE under different scan rates and directions. [15][16][17] In particular, low activation energies for the migration of halide-ion vacancies with shallow defect energy levels have been easy to produce.
Deep defects often act asShockley-Read-Hall recombination centers in semiconductor materials, degrading the photoelectric performance and long-term stability of assembled photovoltaic devices. In this report, deep level transient spectroscopy is probed to determine defect concentrations and defect energy levels in all-inorganic CsPbI 3−x Br x perovskite solar cells.Combining that data with the density functional theory calculation, the dominant deep defect states are assigned to antisite defect pairs (Pb I and I Pb ) and interstitial defects (Pb i ) in freshly prepared CsPbI 3−x Br x films. Astonishingly, all these defects are reduced by approximately one or two orders o...