Abstract:We measured the pseudodielectric function (PDF) of Ge1-yCy and Ge-rich Si1-x-yGexCy alloys from 1.1 to 5.2 eV using spectroscopic ellipsometry. These alloys were grown by molecular beam epitaxy at 6000C on (001) Si substrates. Analytical lineshapes fitted to numerically calculated derivatives of their PDFs determined the critical-point parameters of the E1, E1+Δ1, E0', and E2 transitions. The critical-point energies of the Ge1-yCy alloys were found to be similar to bulk Ge. This indicates that the presence of … Show more
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