Ellipsometry studies on the effect of etching time in porous silicon

Prabakaran, R.; Raghavan, G.; Sundari, S. Tripura; Kesavamoorthy, R.; Xavier, Francis

doi:10.1016/s1386-9477(02)00571-4

Cited by 19 publications

(18 citation statements)

References 30 publications

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“…This a-Si mode is more prominent in the case of higher current density PS, which would be present around SiNCs. Our previous HRTEM investigation confirms this finding [15]. The crystalline fraction (X c ) of S2 specimen is estimated using the relation, X c = I c /(I c + I a ), where I a and I c are the integrated area of the peaks for a- Si and SiNCs mode, respectively and estimated as 44.6%, which is very well corroborated with results obtained (40.7%) from phonon confinement model.…”

Section: Raman Scatteringsupporting

confidence: 87%

n-PS/a-Si:H heterojunction for device application

Prabakaran

Águas

Fortunato

et al. 2008

Journal of Non-Crystalline Solids

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Section: Raman Scatteringsupporting

confidence: 87%

n-PS/a-Si:H heterojunction for device application

Prabakaran

Águas

Fortunato

et al. 2008

Journal of Non-Crystalline Solids

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“…The appearance of a broad XRD hump at about 22.5°2h in Fig. 1(b) might be due to a-SiO 2 present in the PS specimens [7].…”

Section: X-ray Diffraction Measurementsmentioning

confidence: 94%

“…The 0.28 cm 2 active cell area was used for the present investigations. The details of I-V characterization, XRD, FTIR, AFM and Raman measurements were discussed elsewhere [7][8][9].…”

Section: Experiments Detailsmentioning

confidence: 99%

Fabrication and characterization of hybrid solar cells based on copper phthalocyanine/porous silicon

Prabakaran

Fortunato

Martins

et al. 2008

Journal of Non-Crystalline Solids

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“…Moreover, (Ψ , ∆) are wavelength dependent. There are few works about in-situ SE to study the PSi formation [42][43][44][45][46].…”

Section: Interferometry Techniquesmentioning

confidence: 99%

Optical interferometry and photoacoustics as in-situ techniques to characterize the porous silicon formation: a review

Ramirez-Gutierrez

Castaño-Yepes

Rodríguez‐García

2018

Open Material Sciences

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Porous Silicon (PSi) is a groundbreaking material because its physicochemical properties can be customized through its porosity. This means that monitoring and control of the growing parameters allows the fabrication of PSi-based systems with controlled properties. Interferometry and photoacoustics are non -invasive, noncontact, real-time (in-situ) techniques used to characterize the phenomena that takes place during the formation of PSi. This work presents the mathematical and experimental aspects related to the implementation of the techniques mentioned above, which are meant to characterize the PSi growth in fluoride-based electrolyte media. These methods can determine macroscopic parameters of PSi such as thickness, porosity profile trough effective medium approximation (EMA), refractive index, etching rate, and RMS roughness under 100 nm. The monitoring ability of these techniques is strongly dependent on the wavelength of radiation used. However, it is possible to monitor thickness from λ 0 /4 to ∼ 1/α 0 , where α 0 is the optical absorption coefficient at λ 0 . Also, these techniques can be implemented as feedback control on the etching processes for fabrication of PSi.

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Ellipsometry studies on the effect of etching time in porous silicon

Cited by 19 publications

References 30 publications

n-PS/a-Si:H heterojunction for device application

n-PS/a-Si:H heterojunction for device application

Fabrication and characterization of hybrid solar cells based on copper phthalocyanine/porous silicon

Optical interferometry and photoacoustics as in-situ techniques to characterize the porous silicon formation: a review

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