Ellipsometric study of carbon nitride thin films with and without silicon addition

Chen, L.C; Lin, Huang; Wong, Chiu Soon; Chen, K.H; Lin, Shun-Tang; Yu, Yang; Wang, C.W; Lin, E. K.; Ling, Kow-Je

doi:10.1016/s0925-9635(98)00281-7

Cited by 15 publications

(2 citation statements)

References 22 publications

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“…The good wetting [7], attractive tribological properties [8], and high corrosion resistance of these materials at high temperatures [9,10] suggest many other applications in applied industrial technologies. Such properties as "tunable" characteristics of the forbidden band width [9,11,12], regulated transparency in the visible and infrared (IR) regions [13][14][15], and high thermal sta bility [16] make them promising materials for micro and optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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Abstract⎯Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile silicon organic compound tris(diethylamino)silane (Et 2 N) 3 SiH (TDEAS) in the temperature region 373-1173 K. Thermodynamic simulation of the deposition processes from the gas mixture (TDEAS + He) in the temper ature interval 300-1300 K and pressure interval from 1 × 10 -2 to 10 mm Hg has revealed the possibility of varying the equilibrium composition of the condensed phase depending on the synthesis temperature and the composition of the initial gas mixture. Physicochemical and functional properties of obtained layers were studied by complex of modern methods. It has been established that the chemical composition of the silicon carbonitride layers obtained by the PECVD method, depending on the deposition conditions, approaches that of silicon oxynitride or nitride, and the composition of those obtained by the LPCVD method approaches that of silicon carbide. The presence of nanocrystals with a phase composition close to the stan dard α Si 3 N 4 phase and of carbon inclusions has been found in the layers.

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Section: Introductionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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“…In fact, we have also observed a progressive reduction in the refractive index as the N incorporation increased in the a-CN films deposited by magnetron sputtering. [46] On the other hand, a progressive increase in the refractive index is observed as we introduced more Si into the SiCN films. Part of the contribution for the increase of refractive index of SiCN may arise from a lower N content in the SiCN films than that in the nanocrystalline CN by ion beam sputtering.…”

Section: Refractive Index Of Cn and Sicn Films Deposited By Ion Beam mentioning

confidence: 97%

Growth, Characterization, and Properties of Carbon Nitride With and Without Silicon Addition

Chen

et al. 2000

Int. J. Mod. Phys. B

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Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

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Ellipsometric, XPS and FTIR study on SiCN films deposited by hot-wire chemical vapor deposition method

Rahman¹,

Hasan

2016

Materials Science in Semiconductor Processing

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Ellipsometric study of carbon nitride thin films with and without silicon addition

Cited by 15 publications

References 22 publications

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

Growth, Characterization, and Properties of Carbon Nitride With and Without Silicon Addition

Ellipsometric, XPS and FTIR study on SiCN films deposited by hot-wire chemical vapor deposition method

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