2013
DOI: 10.1088/0256-307x/30/1/017902
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Elimination of the Schottky Barrier at an Au-ZnSe Nanowire Nanocontact via in Situ Joule Heating

Abstract: In order to improve electron transport, in situ Joule heating of an Au-ZnSe nanowire-Au (M-S-M) nanostructure is conducted inside transmission electron microscopy (TEM) until the Au metal is molten at the reversely biased Au-ZnSe nanowire (M-S) nanocontact. The observed microstructural evolution is responsible for the electron transport property changes, i.e. a nonlinear to linear transformation in the current-voltage (I—V) relationship was measured in situ before and after the Joule annealing. The linear char… Show more

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Cited by 7 publications
(3 citation statements)
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“…Recently, nanomaterials have aroused interest among the scientific communities in the fields of physics, chemistry, and engineering. Some of these materials are nanoparticles, nanowires, [1][2][3][4] nanotubes, [5][6][7][8][9][10][11][12][13][14][15] and nanotube resonators. Among them, beam type structures play a vital role in the field of nanotechnology.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, nanomaterials have aroused interest among the scientific communities in the fields of physics, chemistry, and engineering. Some of these materials are nanoparticles, nanowires, [1][2][3][4] nanotubes, [5][6][7][8][9][10][11][12][13][14][15] and nanotube resonators. Among them, beam type structures play a vital role in the field of nanotechnology.…”
Section: Introductionmentioning
confidence: 99%
“…In general, the higher the resistance, the higher the heat. A large number of studies have been carried out to improve the contact characteristics of MWCNT and metal by using the local Joule heat to change the structure of the contact point, which makes the MWCNT and electrode covered with amorphous carbon. However, it is indirectly verified through experiments that under the experimental conditions in this paper, the step change of conductivity is not caused by the change of contact resistance but by intrinsic resistance. The change of intrinsic resistance of CNTB can be divided into the intrinsic resistance of CNT contained in CNTB and the change of tunneling resistance between CNTs and layers.…”
Section: Methodsmentioning
confidence: 77%
“…The linear 𝐼-𝑉 characteristic of Au-ZnSe NW nanocontact confirms formation of ohmic contact. [19] Once ohmic contact is formed, the 𝐼-𝑉 relationship will be mainly determined by the behavior of the nanoelectronic. Since ohmic contact with low resistance can be a better suppression of self-heating effects during operation of nanoelectronics, ohmic contact is essential to improve lifetime for reliable operation of nanoelectronics and to enhance performance of nanoelectronics.…”
mentioning
confidence: 99%