Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111)

Shi, Yuchen; Zakharov, Alexei; Ivanov, Ivan Gueorguiev; Yazdi, Gholam Reza; Jokubavičius, Valdas; Syväjärvi, Mikael; Yakimova, Rositsa; Sun, Jianwu

doi:10.1016/j.carbon.2018.08.042

Cited by 15 publications

(20 citation statements)

References 37 publications

(44 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar technique has been implemented for the fabrication of a heterostructure of GR and monolayer transition-metal dichalcogenides, 24 or the recent developments in the fabrication of high-quality graphene can be used for the same. 25 In addition, the magnetization in HG can be modulated via photolithographic processes. 26 Such modulations in the proposed GR–HG heterostructures can be used to tune its properties for desired magnetic applications.…”

Section: Introductionmentioning

confidence: 99%

Hydrogenated-Graphene-Encapsulated Graphene: A Versatile Material for Device Applications

Ghadiyali

Chacko

2019

ACS Omega

View full text Add to dashboard Cite

Graphene and its heterostructures exhibit interesting electronic properties and are explored for quantum spin Hall effect (QSHE) and magnetism-based device applications. In present work, we propose a heterostructure of graphene encapsulated by hydrogenated-graphene, which could be a promising candidate for a variety of device applications. We have carried out DFT calculations on this system to check its feasibility to be a versatile material. We found that electronic states of multilayer pristine graphene, especially the Dirac cone, an important feature to host QSHE, can be preserved by sandwiching it by fully hydrogenated graphene. The interference of electronic states of hydrogenated graphene was insignificant with those of graphene. States of graphene were also found to be stable upon application of an electric field up to ±2.5 V/nm. For device applications, multilayer graphene or its heterostructures are required to be deposited on a substrate, which interacts with the system opening up a gap at the Dirac cone making it less suitable for QSHE applications, and hydrogenated graphene can prevent it. Magnetization in these hydrogenated-graphene-sandwiched graphene systems may be induced by creating vacancies or distortions in hydrogenated graphene, which was found to have a minimal effect on graphene’s electronic states, thus providing an additional degree of manipulation. We also performed a set of calculations to explore its applicability for detecting some molecules. Our results on trilayer graphene encapsulated by hydrogenated graphene indicate that all these observations can be generalized for systems with a larger number of graphene layers, indicating that multilayer graphene sandwiched between two hydrogenated graphene is a versatile material that can be used in QSHE and sensor devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Hydrogenated-Graphene-Encapsulated Graphene: A Versatile Material for Device Applications

Ghadiyali

Chacko

2019

ACS Omega

View full text Add to dashboard Cite

show abstract

“…To remove contaminations and oxide from the surface, the 3C‐SiC crystal was gradually cleaned by acetone, ethanol, H 2 O:NH 3 :H 2 O 2 (5:1:1), H 2 O:HCl:H 2 O 2 (6:1:1), and hydrofluoric acid (HF) . For the growth of graphene, the sample was annealed at 1800 °C with a ramping rate of 25 °C min −1 under 850 mbar argon atmosphere in an inductively heated furnace . After annealing at the target temperature for 5 min, the sample was cooled down to the room temperature naturally by switching off the system.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

Shi

Zakharov

Ivanov

et al. 2020

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

Graphene layers grown on the C‐face SiC exhibit quite different structural and electronic properties compared with those grown on the Si‐face SiC. Herein, the growth and structural properties of graphene on the off‐axis C‐face 3C‐SiC(1true¯1true¯1true¯) are studied. The as‐grown 4° off‐axis 3C‐SiC(1true¯1true¯1true¯) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low‐energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four‐ML graphene domains are grown over several micrometers square, which enables us to measure micro low‐energy electron diffraction (μ‐LEED) on the single graphene domain. The μ‐LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C‐face off‐axis 3C‐SiC(1true¯1true¯1true¯).

show abstract

“…3C-SiC can be also employed as the substrate for the epitaxial growth of graphene. The Si-face 3C-SiC is a proper substrate for the growth of large-area homogeneous graphene, particularly, multilayer graphene [9,10]. In addition, the electronic band structure of graphene epilayer grown on the C-face SiC are very different from that on Si-face [11][12][13], which considerably fascinates so much discussion.…”

Section: Potential Applications Of 3c-sicmentioning

confidence: 99%

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

Self Cite

View full text Add to dashboard Cite

Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H-or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si-C bilayers along the c-axis crystal direction. Among different polytypes of SiC, 3C-SiC has attracted specific interest due to its prominent properties such as high electron mobility and low interface trap density in MOSFET devices. Moreover, with a relatively small bandgap of 2.36 eV and suitable conduction and valence band positions, 3C-SiC has also been considered as a promising material for solar water splitting application, which provides a completely renewable approach to convert solar energy into storable hydrogen fuel. However, the growth of high-quality 3C-SiC remains a great challenge for decades. Graphene, a single layer of sp 2-bonded carbon atoms, has shown outstanding electronic properties and becomes the most promising candidate for next-generation electronic and optoelectronic devices. Epitaxial growth of graphene on SiC substrates by sublimation of Si from SiC provides a feasible route to fabricate wafer-scale device-quality graphene. The most advantage of this method is that a variety of devices can be processed directly on graphene/SiC without any transfer process, which is needed in the case of graphene produced by exfoliation or CVD on metals. During past years, the growth of monolayer (ML) graphene on hexagonal SiC (6H-SiC, 4H-SiC) substrates has been extensively studied. However, it is challenging to grow large-area and uniform multilayer graphene on hexagonal SiC substrates due to the stepbunching issue during the sublimation growth. Multilayer graphene has recently attracted great interest due to its tunable electronic properties for various electronic and optoelectronic applications. It has been shown that the electronic properties of multilayer graphene are strongly influenced by its stacking sequence. In particular, the rhombohedral stacking sequence (ABC stacking) has shown its potential to introduce a flat band energy dispersion at the K points of the Brillouin zone, which would result in many exotic phases of matter such as superconductivity. Among various SiC polytypes, 3C-SiC is predicted to be the most suitable substrate for the epitaxial growth of rhombohedral multilayer graphene. This thesis work mainly covers the sublimation growth of high-quality Si-face and C-face 3C-SiC on off-oriented 4H-SiC, exploring the proper parameter window for the growth of

show abstract

Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111)

Cited by 15 publications

References 37 publications

Hydrogenated-Graphene-Encapsulated Graphene: A Versatile Material for Device Applications

Hydrogenated-Graphene-Encapsulated Graphene: A Versatile Material for Device Applications

Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Contact Info

Product

Resources

About