Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF<sub>4</sub>) precursor for high quality thick silicon carbide (SiC) homoepitaxy

Rana, Tawhid; Chandrashekhar, M. V. S.; Sudarshan, Tangali S.

doi:10.1002/pssa.201228319

Cited by 24 publications

(39 citation statements)

References 31 publications

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“…In most cases, Cl has been used for this purpose. Recent research also found that Br and F chemistries are applicable to SiC CVD [33][34][35] .…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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“…In most cases, Cl has been used for this purpose. Recent research also found that Br and F chemistries are applicable to SiC CVD [33][34][35] .…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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“…preventing the formation of silicon droplets, due to the stronger Si-F (597 kJ/mol) and Si-Br (330 kJ/mol) bond strengths as compared to the Si-Si bond (226 kJ/mol). Recently, interesting studies of fluoride-based chemistry have been reported to give good results [66], but no recent studies of bromine-based chemistry can be found. When looking for Br-based chemistry for SiC CVD in the literature, two papers comparing methyl trichlorosilane, CH3SiCl3 (MTCS) and methyl tribromosilane, CH3SiBr3…”

Section: Chloride-based and Bromide-based Cvd Of Sicmentioning

confidence: 99%

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Yazdanfar¹

2014

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“…5 Another route is to add a chemical species that outcompetes the formation of Si-Si bonds by forming bonds to Si stronger than the Si-Si bond. For this route, addition of chlorine has been studied in great detail, 6 but it has also been shown that addition of bromine 7 or fluorine 8 have the same effect.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Stenberg

Janzén

Pedersen

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF4 as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas phase, making SiF4 an interesting Si precursor. However, before a fluorinated CVD chemistry can be adopted, the effect of fluorine on the dopant incorporation must be understood since dopant incorporation is of paramount importance in semiconductor manufacturing. Here, the authors present dopant incorporation studies for n-type doping with N using N2 and p-type doping with Al using TMAl in fluorinated CVD of homoepitaxial SiC. The precursors used were SiF4 as Si precursor and the source of F together with CH4 as C precursor. The authors find that it is possible to control the doping in SiC epitaxial layers when using a fluorinated CVD chemistry for both n- and p-type materials using the C/Si ratio as in standard SiC CVD. However, large area doping uniformity seems to be a challenge for a fluorinated CVD chemistry, most likely due to the very strong Si–F and Al–F bonds.

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Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF₄) precursor for high quality thick silicon carbide (SiC) homoepitaxy

Cited by 24 publications

References 31 publications

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

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Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy

Cited by 24 publications

References 31 publications

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

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Product

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Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF₄) precursor for high quality thick silicon carbide (SiC) homoepitaxy