Elimination of irradiation point defects in crystalline solids: Sink strengths

“…as a a k r t c r t D r t = , where α corresponds to mobile defect species and κ αs (r, t) (cm −2 ) represents the sink strength given by (Doan and Martin, 2003): The sink strength measures the affinity of a sink for defects, which is independent of defect properties and 1 ( , ) as r t κ − corresponds to the mean distance for a traveling defect in the crystal before it is trapped by sinks.…”

Section: Recombination and Sink Annihilation Ratesmentioning

confidence: 99%

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Huang¹,

Gao²,

Cardimona³

et al. 2015

American Journal of Space Science

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A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultra-fast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. Realistic interatomic potentials are employed in molecular-dynamics calculations for the first two stages up to 100 ns as well as for the system composed of layers with thicknesses of hundreds of times the lattice constant. These quasi-steady-state results for individual layers are input into a ratediffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic-scale layered-structure system, including planar biased dislocation loops and spherical neutral voids, on a much longer time scale. Assisted by the density-functional theory for specifying electronic properties of point defects, the resulting spatial distributions of these defects and clusters are taken into account in studying the degradation of electronic and optoelectronic devices, e.g., carrier momentum-relaxation time, defect-mediated non-radiative recombination, defect-assisted tunneling of electrons and defect or charged-defect Raman scattering as well. Such theoretical studies are expected to be crucial in fully understanding the physical mechanism for identifying defect species, performance degradations in field-effect transistors, photo-detectors, light-emitting diodes and solar cells and in the development of effective mitigation methods during their microscopic structure design stages.

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“…with minimum ecological disruption and resistant to radiation. In case of semiconductors, the radiation leads to production of lattice defects in the form of vacancies, defect clusters and dislocations that influence the energy levels and alter the material parameters [6][7][8]. These defects play significant role in the performance of the devices such as sensors, solar cells, metal-oxidesemiconductor junctions, schottky diodes etc.…”

Section: Introductionmentioning

confidence: 98%

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

Rana

Chauhan

2014

J Mater Sci: Mater Electron

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Present study is related to the synthesis of cadmium selenate nanowires via template-assisted electrodeposition approach and their characterization before and after lithium (Li 3? ) ion beam irradiation. Energy-dispersive X-ray analysis and X-ray diffraction study confirmed the synthesis of cadmium selenate nanowires with monoclinic structure. Electrical properties were examined with current-voltage (I-V) source meter using two-probe method. The electrical conductivity augmentation was perceptible for semiconducting nanowires with the increase in the ion beam fluence. The band gap of pristine nanowires was found to be 1.96 eV, while the red shift was observed in the optical band gap of ion irradiated nanowires and it approaches to the value of 1.31 eV at last fluence. In XRD spectra, no evidence was found of phase change or shifting in '2h' position or evolution of any new peak. However, variation in the peak intensities was noticed that could be the result of movement of plane orientation. This study revealed that the defects induced by the ion irradiation and variation in potential gradient with fluence plays a major role in the alteration of the optical and electrical properties of the semiconducting nanowires.

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Elimination of irradiation point defects in crystalline solids: Sink strengths

Cited by 61 publications

References 21 publications

Effect of Grain Boundary Stresses on Sink Strength

Effect of Grain Boundary Stresses on Sink Strength

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

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