Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing

Belas, E.; Bugár, M.; Grill, R.; Horodyský, P.; Feš, R.; Franc, J.; Moravec, P.; Matěj, Zdeněk; Höschl, P.

doi:10.1007/s11664-007-0167-8

Cited by 23 publications

(15 citation statements)

References 11 publications

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“…Residual spots can be interpreted either as the inclusions with a reduced size which are located at their original positions in the matrix, or as voids, with the wall probably decorated by formed Cd-rich CdTe. 4,11 An SE image of a triangular as-grown Te inclusion, revealed on the sample surface after etching in a 1% Br-methanol solution, is shown in Fig. 2.…”

Section: Te Inclusionsmentioning

confidence: 99%

“…6 Inclusions are formed by capturing of the melt droplets on the growth interface during crystallization in contrast to precipitates, which are created during cooling of the crystal due to the retrograde solubility of the excess component in the solid. 5,7,8 The detailed morphology of inclusions has been investigated by IR microscopy, [9][10][11] in which triangular or hexagonal Te-rich and star-shaped Cd-rich inclusions are usually identified. Cd-rich annealing is usually used for the reduction of Te inclusions and enhancement of the IR transmittance, 1,2,5,11 and Te-rich annealing is used for the elimination of Cd inclusions.…”

Section: Introductionmentioning

confidence: 99%

“…5,7,8 The detailed morphology of inclusions has been investigated by IR microscopy, [9][10][11] in which triangular or hexagonal Te-rich and star-shaped Cd-rich inclusions are usually identified. Cd-rich annealing is usually used for the reduction of Te inclusions and enhancement of the IR transmittance, 1,2,5,11 and Te-rich annealing is used for the elimination of Cd inclusions. 11 Herein we report the detailed investigation of the effect of Cd-or Te-rich annealing on structural and optical properties of (CdZn)Te and In-doped CdTe single crystals containing Te or Cd inclusions.…”

Section: Introductionmentioning

confidence: 99%

“…Cd-rich annealing is usually used for the reduction of Te inclusions and enhancement of the IR transmittance, 1,2,5,11 and Te-rich annealing is used for the elimination of Cd inclusions. 11 Herein we report the detailed investigation of the effect of Cd-or Te-rich annealing on structural and optical properties of (CdZn)Te and In-doped CdTe single crystals containing Te or Cd inclusions.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing

Belas

Bugár

Grill

et al. 2008

Journal of Elec Materi

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CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te pressures with the aim of eliminating Te or Cd inclusions. Te inclusions were reduced by Cd-saturated annealing at temperatures above 660°C. Only small (<1 lm) residual dark spots, located at the original position of as-grown inclusions, were observed after annealing. The size of Cd inclusions was reduced by Te-rich annealing at temperatures higher than 700°C. A specific cooling regime was used to eliminate new small Te precipitates ($1 lm) concurrently formed on dislocations during Te-rich annealing. Poor infrared transmittance of samples with Cd inclusions was detected after Te-rich annealing; therefore, Cd-saturated re-annealing of annealed samples was used for increasing infrared transmittance to a value above 60%. Alternative models explaining the formation of star-shaped corona-surrounding inclusions are discussed.

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Section: Te Inclusionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing

Belas

Bugár

Grill

et al. 2008

Journal of Elec Materi

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“…If all sulfide grains in the SMB are of MSG origin, how did they purge their inclusions? Solid-state annealing and recrystallization may have eliminated inclusions (Webb & Jackson 1995, Li & Jie 2002, Wang et al 2003, Belas et al 2007. As an alternative, if the sulfide grains partially melted to produce films of melt along grain boundaries, these local variations in the Ccp:Po ratio, on the scale of the batholith the proportions of mainly restitic pyrrhotite to mainly partially melted chalcopyrite and other sulfide components (but not necessarily minerals) should be similar in the SMB contaminants and the MSG rocks.…”

Section: Interpretation Of the Modal And Textural Differences Betweenmentioning

confidence: 99%

Contamination of the South Mountain Batholith by Sulfides From the Country Rocks

Clarke¹,

Erdmann²,

Samson³

et al. 2009

The Canadian Mineralogist

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Sulfide minerals (Po + Py + Ccp >> Sp + Gn + Apy) are common constituents of the Meguma Supergroup (MSG) country rocks, and are also common in the marginal facies of the South Mountain Batholith (SMB), Nova Scotia, relative to the interior of the batholith. The distribution and relative modal proportions of sulfides in the granites near the contact indicate that they are probably contaminants from the MSG country rocks. We trace the textural and chemical changes that occur in Py, Po, and Ccp from the country rocks through their xenoliths to the granite during their assimilation in the granite. Pyrrhotite in the country rock ranges from large polycrystalline porphyroblasts with many inclusions to small individual grains free of inclusions, all with low concentrations of Co and Ni. Chalcopyrite in the country rocks occurs mainly as anhedral inclusions in pyrrhotite, and as small isolated grains in the silicate matrix. Pyrite in the country rocks occurs as euhedral cubes or as anhedral cores to pyrrhotite grains. Relative to their occurrences in the MSG country rocks, characteristics of sulfide grains in the granitic rocks include generally smaller grain-sizes, Po grains with fewer silicate and oxide inclusions, development of some Po grains with an inclusion-rich core and an inclusion-free rim, Po grains that have a lower Fe:S ratio and contain higher concentrations of Co (up to 0.17 wt%) and Ni (up to 0.41 wt%), local increases in the Ccp:Po ratio, better development of crystal faces on Ccp inclusions in Po, development of micro-dropper or silicate-melt-displacing textures, and a general absence of Py except for its association with Ccp in microgranitoid enclaves. The grain-size reduction is consistent with disintegration of polycrystalline MSG sulfide grains, either in the solid state or in a partially melted state, as well as dissolution in the SMB magma. The higher concentrations of Co and Ni in the SMB pyrrhotite are consistent with cation exchange with the granitic melt. Most of the remaining characteristics are consistent with partial melting of the multiphase MSG sulfide blebs related to their incorporation in the SMB magma. From known phase-relations in the system Cu-Fe-S, we deduce that temperatures of the SMB magma exceeded the temperature of beginning of melting of the composition-dependent multiphase MSG sulfide aggregates, and thus at least some of them underwent partial melting. Other more refractory grains, which have undergone only textural (annealing, ductile deformation) and chemical modification in the solid state, are simply modified xenocrysts.Keywords: sulfide, contamination, assimilation, granite, melting, texture, composition, South Mountain Batholith, Nova Scotia. SOMMaireLes minéraux sulfurés (Po + Py + Ccp >> Sp + Gn + Apy) sont répandus dans les roches encaissantes du Supergroupe de Meguma (MSG), et aussi dans les faciès de bordure du batholite de South Mountain (SMB), en Nouvelle-Écosse, par rapport aux roches typiques de l'intérieur du batholite. La distribution et les propor...

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Melt growth and post‐grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method

Franc

Šedivý

Belas

et al. 2013

Cryst. Res. Technol.

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We present results of development of CdZnTe semi-insulating crystals prepared by Vertical Gradient Freeze method in a 4-zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermi level and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two-step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two-step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material after annealing.

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Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing

Cited by 23 publications

References 11 publications

Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing

Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing

Contamination of the South Mountain Batholith by Sulfides From the Country Rocks

Melt growth and post‐grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method

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