Elimination of heterojunction band discontinuities by modulation doping

Schubert, E. Fred; Tu, Li; Zydzik, G. J.; Kopf, R. F.; Benvenuti, A.; Pinto, M.R.

doi:10.1063/1.106636

Cited by 79 publications

(35 citation statements)

References 11 publications

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“…Thus, present strategy in development of HgCdTe nBn detectors concentrates on decreasing or even removing the valence band offset in the barrier layer, what will result in lower operating bias, lower dark current, and ability to operate at higher temperatures. Ways to eliminated valence band off− set have been proposed [52,53] and have been undertaken for HgCdTe barrier detectors by appropriate bandgap engineering [54].…”

Section: Hgcdte Barrier Detectorsmentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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Section: Hgcdte Barrier Detectorsmentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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“…С целью уменьшения последовательного сопротивления лазера (сопротивления R n и R p на эквивалентной схеме) при сохранении низкого уровня оптических потерь были предложены различные схемы модификации зонной диаграммы гетерограниц в сочетании с оптимизацией профилей легирования: ступенчатое изменение состава [24,25], параболические профили изменения состава [26], унипараболические профили измене-ния состава [27]. В случае эпитаксиального выращивания гетерострук-тур ВИЛ методом молекулярно-пучковой эпитаксии активно использу-ются " цифровые" градиенты (digital alloy grading), которые позволяют сформировать любой эффективный профиль изменения состава [28,29].…”

Section: увеличение паразитной частоты отсечкиunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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“…38 Further strategies for the development of XBn detectors should concentrate on decreasing or even removing the valence-band offset in the barrier layer (especially in HgCdTe nBn detectors), which will result in lower operating bias, lower dark current, and the ability to operate at higher temperatures. Ways to eliminate the valence-band offset have been proposed 40,41 and implemented for HgCdTe barrier detectors by appropriate bandgap engineering. 42 …”

Section: Xbn Detector Simulation Proceduresmentioning

confidence: 99%

Mid-Wavelength Infrared nBn for HOT Detectors

Rogalski

Martyniuk

2014

Journal of Elec Materi

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Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.

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Elimination of heterojunction band discontinuities by modulation doping

Cited by 79 publications

References 11 publications

Barrier infrared detectors

Barrier infrared detectors

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Mid-Wavelength Infrared nBn for HOT Detectors

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