Elimination of fixed pattern noise in super-8 format CCD image sensor by the use of epitaxial wafers

Hiroshima, Y.; Matsumoto, Shigenori; Senda, K.; Kuriyama, T.; Horii, Kenju; Kuroda, Takeshi; Kunii, T.; Mizuno, Hiroshi

doi:10.1109/iedm.1984.190634

Cited by 8 publications

(12 citation statements)

References 5 publications

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“…Similar fixed patterns have been reported for n-channel, fully depleted CCDs [17] and other silicon-based imagers including partially depleted, back-illuminated silicon vidicons [18,19] and front-illuminated commercial CCDs [20,21], Charge Priming Devices [22], and CMOS image sensors [23]. Concentric patterns that represent the error in position location for charged particles in silicon drift detectors have also been reported [24][25][26].…”

Section: Low-level Effects In Uniform Illuminationsupporting

confidence: 71%

“…The concentric fixed patterns in the imagers mentioned previously have been attributed to lateral electric fields that displace the charge carriers [19,20], recombination centers and crystal defects that affect the amount of charge collected [20,23], and resistivity-induced variations in the potential barrier to the substrate for the imagers that utilize a vertical-overflow drain [21,22]. Of those effects, it is expected that the lateral electric fields will dominate in fully depleted CCDs as is the case for the silicon drift detectors [24][25][26].…”

Section: Low-level Effects In Uniform Illuminationmentioning

confidence: 99%

“…The concentricity of the rings comes about from the slicing into wafers of the bulk ingots transverse to the growth direction where the growth surface, i.e the crystal-melt interface is approximately spherical in shape [28,29]. As a result it is typically observed that the spatial frequency of the striations increases towards the outer portion of the wafer [21,22,30]. This effect can be seen in the upper right corner of the image shown in Fig.…”

Section: Low-level Effects In Uniform Illuminationmentioning

confidence: 99%

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Physics of fully depleted CCDs

Holland

Bebek²,

Kolbe³

et al. 2014

J. Inst.

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In this work we present simple, physics-based models for two effects that have been noted in the fully depleted CCDs that are presently used in the Dark Energy Survey Camera. The first effect is the observation that the point-spread function increases slightly with the signal level. This is explained by considering the effect on charge-carrier diffusion due to the reduction in the magnitude of the channel potential as collected signal charge acts to partially neutralize the fixed charge in the depleted channel. The resulting reduced voltage drop across the carrier drift region decreases the vertical electric field and increases the carrier transit time. The second effect is the observation of low-level, concentric ring patterns seen in uniformly illuminated images. This effect is shown to be most likely due to lateral deflection of charge during the transit of the photogenerated carriers to the potential wells as a result of lateral electric fields. The lateral fields are a result of space charge in the fully depleted substrates arising from resistivity variations inherent to the growth of the high-resistivity silicon used to fabricate the CCDs.

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Section: Low-level Effects In Uniform Illuminationsupporting

confidence: 71%

Section: Low-level Effects In Uniform Illuminationmentioning

confidence: 99%

Section: Low-level Effects In Uniform Illuminationmentioning

confidence: 99%

See 1 more Smart Citation

Physics of fully depleted CCDs

Holland

Bebek²,

Kolbe³

et al. 2014

J. Inst.

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“…Heavy metal contamination at surface can be eliminated by avoiding heavy metals usage such as gold and platinum. Microdefects in substrate can be avoided by use of an epitaxial wafer plus intrinsic/extrinsic gettering process [30]. In order to exclude peripheral carriers generated by Generation-Recombination pairs outside of diode region, an additional PN junction isolation ring is applied at the edge of photodiode.…”

Section: High Sensitivity Si Photodiodementioning

confidence: 99%

“…The low noise Si photodiode has been researched for many years for variant applications [30][31][32]. The primary noise sources of Si photodiode are thermal noise and shot noise which is caused by dark current.…”

Section: High Sensitivity Si Photodiodementioning

confidence: 99%

Integrated plastic microfluidic device for ssDNA separation

Zheng

Webster

Mastrangelo

et al. 2007

Sensors and Actuators B: Chemical

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Status of the CCD development for the Dark Energy Spectroscopic Instrument

et al. 2017

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A: We describe improvements in CCD performance that have been achieved on 4k × 4k, (15 µm) 2 -pixel, fully depleted CCDs for the Dark Energy Spectroscopic Instrument (DESI) [1]. With respect to our previous work on CCDs for the Dark Energy Camera and the Baryon Oscillation Spectroscopic Survey, our goals for the DESI CCD development were to improve read noise and quantum efficiency, improve the astrometric precision, and decrease pixel-size variations. We report experimental results on recently fabricated CCDs to be used in DESI.

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Elimination of fixed pattern noise in super-8 format CCD image sensor by the use of epitaxial wafers

Cited by 8 publications

References 5 publications

Physics of fully depleted CCDs

Physics of fully depleted CCDs

Integrated plastic microfluidic device for ssDNA separation

Status of the CCD development for the Dark Energy Spectroscopic Instrument

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