Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Abstract

Metal oxides suffering from oxygen molecule chemisorption display environment-dependent metastability, leading to unstable resistive memory characteristics and performance degradation. To obtain ambient-independent characteristics, we introduced nitrogen into ZnO resistive memory devices, compensating for the native defects and suppressing oxygen chemisorption, giving rise to a significant improvement in switching behavior without undesired surface effects. Moreover, by thermal activation of the nitrogen doping via annealing, an increased yield ratio from 50% to 82%, a reduced current compliance from 15 mA to 5 mA, and more stable cycling endurance are obtained. Our findings give physical insight into designing resistive memory devices.

Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by voltage prestress

“…Significant switching dispersion is commonly observed, and this dispersion causes operational difficulties and switching failure. Many methods, such as embedding nanoparticles, 22,23) doping, 24,25) and bilayer structuring, 26,27) are used to minimize switching dispersion. However, these methods increase production complexity and cost.…”

Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment

“…However, a detailed switching mechanism is still lacking. Several studies [12][13][14] proposed the surface effect on the resistive switching behaviors, which indicated that oxygen or humidity may influence the redox reaction in the interface or resistive layer. Although a RRAM device has many promising advantages, the resistive switching behavior is unstable and may cause operation failure.…”

Effect of ultraviolet illumination on metal oxide resistive memory

“…4 Indeed, recent studies investigating the influence of ambiences conditions, 5 harsh environments, 6 and roughness 7 on metal oxidebased RRAM have highlighted SDR as the main cause of low switching yield and resistance fluctuation. On the other hand, the treatments such as surface modification, 6 doping, 8 and electrode material engineering 9 have improved RS stability and RRAM performance due to the better controllability of chemisorbed oxygen at surface-related defects. In this regard, the light illumination with the energy higher than the bandgap of metal oxide memory, which modulates the chemisorbed oxygen at surface-related defects via oxygen photodesorption 10 is expected to have impacts on RRAM stability and performance.…”