2019
DOI: 10.1016/j.jallcom.2018.09.273
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Eliminating oxygen vacancies in SnO2 films via aerosol-assisted chemical vapour deposition for perovskite solar cells and photoelectrochemical cells

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Cited by 86 publications
(35 citation statements)
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“…All these facts confirm the positive effect of the UVO treatment, which influences the density and distribution of surface defects, believed to be oxygen vacancies and/or terminal hydroxyl groups, playing a central role in the improvement of the SnO 2 /perovskite interface quality and in the device performance by the reduction in the recombination rate.…”
Section: Figures Of Merits Jsc Ff Voc and Pce Expressed As Mean supporting
confidence: 62%
“…All these facts confirm the positive effect of the UVO treatment, which influences the density and distribution of surface defects, believed to be oxygen vacancies and/or terminal hydroxyl groups, playing a central role in the improvement of the SnO 2 /perovskite interface quality and in the device performance by the reduction in the recombination rate.…”
Section: Figures Of Merits Jsc Ff Voc and Pce Expressed As Mean supporting
confidence: 62%
“…In other words, most photons with longer wavelengths were not transmitted properly but were scattered and reflected by the film. However, the observed light absorption in this region can be expected not to contribute to the formation of electron-hole pairs owing to the bandgap [35]. DDTS-15s film exhibited the lowest light absorption compared with DDTS-5s and DDTS-10s films.…”
Section: Resultsmentioning
confidence: 94%
“…V O has a low formation energy of 0.10 eV, which is consistent with the previous experiments’ observations that O vacancy can easily form at the interface. 68 , 69 For V I and I i , their formation energies at the interface are 0.37 and 0.26 eV, respectively, relatively smaller when compared to the bulk. It can be attributed to the bonding environment at the interface that the lattices of the perovskites are expanded by the tensile stress, which weakens the bond strength of Pb–I bonds and enlarges the interstice space.…”
Section: Resultsmentioning
confidence: 95%
“… 67 Noh et al found there are a lot of oxygen vacancies in SnO 2 films. 68 Shi et al indicated that there might be some element exchanges at the interfaces. 69 On the basis of these results, we have considered all these possible point defects that might be easily formed at the CH 3 NH 3 PbI 3 /SnO 2 interfaces, including four vacancies (V O , V Pb , V I , V MA ), three interstitials (Sn i , O i , I i ), one cation substitution (MA Pb ), and two antisite substitutions (Sn–I, Pb–O).…”
Section: Resultsmentioning
confidence: 99%