Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions

Dong, Linpeng; Yu, Jiangang; Zhang, Yuming; Jia, Renxu

doi:10.1016/j.commatsci.2018.10.003

Cited by 44 publications

(43 citation statements)

References 40 publications

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“…Gallium oxide (Ga 2 O 3 ) is a promising wide band gap semiconductor that exhibits many natural advantages over other materials, especially in developing self-powered UV photodetectors. − In recent years, many reports have been published in this area, which has attracted widespread attention. Because of the intrinsic oxygen deficiency, hydrogen doping, Si impurities, etc., Ga 2 O 3 behaves as an n-type oxide semiconductor. − Therefore, it can form a p–n junction for self-powered UV photodetectors with some p-type semiconductor materials, including GaN, − SiC, − etc. , These photodetectors exhibit satisfactory photoresponsivity under the bias of 0 V. For example, our group , constructed self-powered UV photodetectors using GaN/Ga 2 O 3 and GaN/Sn:Ga 2 O 3 p–n junction with the responsivity of 28.44 mA/W and 3.05 A/W. Shen et al manufactured a self-powered Au/β-Ga 2 O 3 nanowire array film Schottky junction with a responsivity of 0.01 mA/W.…”

Section: Introductionmentioning

confidence: 99%

All-Oxide NiO/Ga₂O₃ p–n Junction for Self-Powered UV Photodetector

Wang

Guo

et al. 2020

ACS Appl. Electron. Mater.

161

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Recently, Ga2O3-based self-powered ultraviolet photodetectors have aroused great interest due to their potential applications in civil, medical, and environmental monitoring fields. So far, most p–n junction photodetectors are fabricated with p-type semiconductors like GaN and SiC, which are usually nonoxide materials. As a result, the p-type semiconductors are oxidized and the conductive properties degenerated when constructing a p–n junction with the Ga2O3 thin film at a high growth temperature. In this work, we chose the oxide NiO as the p-type material and used radio-frequency reactive magnetron sputtering system to fabricate the all-oxide NiO/Ga2O3 p–n junction at room temperature and manufacture the self-powered UV photodetector. Thanks to the type II band alignment, the photodetector exhibits a responsivity (R) of 57 μA/W, a detectivity (D*) of 5.45 × 109 jones, and an I light/I dark ratio of 122 when exposed to a 254 nm light irradiation at 0 V. In addition, the photodetector based on the all-oxide NiO/Ga2O3 p–n junction shows good stability and reproducibility in air, oxygen, and vacuum. Our results provide an inexpensive and suitable pathway for the mass production of self-powered UV photodetectors.

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Section: Introductionmentioning

confidence: 99%

All-Oxide NiO/Ga₂O₃ p–n Junction for Self-Powered UV Photodetector

Wang

Guo

et al. 2020

ACS Appl. Electron. Mater.

161

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“…The LDA utilization in this simulation work was used to compare the parameters, cell volume, and cell angle from the feature of the GGA-PBE. The electronic and optical characterization is then determined based on the structural geometry optimization to make the calculations effective and trackable [ 18 ]. The optimization of all calculated structures was done until the Hellmann Feynman force became less than 0.01 eV/Å (1 Å = 0.1 nm).…”

Section: Computational Detailsmentioning

confidence: 99%

“…The theoretically predicted Gr-I and Gr-II metals shows p -type nature by doping on Ga 2 O 3 as reported by Tang et al [ 17 ]. In 2019, Dong et al investigated the magnesium (Mg) element substitute at the gallium site that had proven to be a good p -type conductivity in α-Ga 2 O 3 through first-principles studies [ 18 ]. Tang et al reported that the same alkaline earth metal group, calcium (Ca), plays a deep acceptor element and studied the electronic structures and optical properties of p -type Ca doped on a β-Ga 2 O 3 first-principle calculation [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3

et al. 2021

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Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. In this paper, pure α-Ga2O3 and Ca-doped α-Ga2O3 band structure, the density of states, charge density distribution, and optical properties were determined by a first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory. It was found that calcium (Ca) doping decreases the bandgap by introducing deep acceptor energy levels as the intermediate band above the valence band maximum. This intermediate valence band mainly consists of Ca 3p and O 2p orbitals and is adequately high in energy to provide an opportunity for p-type conductivity. Moreover, Ca doping enhances the absorptivity and reflectivity become low in the visible region. Aside, transparency decreases compared to the pure material. The optical properties were studied and clarified by electrons-photons interband transitions along with the complex dielectric function’s imaginary function.

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“…[1][2][3] Besides excellent material properties, the simple, low-cost, and mature melt-growth methods for large-area Ga2O3 wafers offers Ga2O3 an economic advantage over other ultra-wide bandgap semiconductors such as AlN and diamond. [2][3] Recently, metal-oxide-semiconductor field-effect transistors (MOSFET) and Schottky barrier diodes (SBD) based on β-phase Ga2O3 have been intensively investigated [4][5][6][7][8][9][10][11] for power application. For instances, A J.…”

mentioning

confidence: 99%

“…For instances, A J. Green et al measured an average Ebr of 3.8 MV/cm in β-Ga2O3 MOSFETs, which surpasses the theoretical limits of GaN and SiC [4] , K. Zeng et al achieved their Ga2O3 MOSFETs using composite field-plate design with an average Ebr of 2.2 MV/cm and breakdown voltage (Vbr) of 1.85 kV [5] , Mg-ion implantation has been systematically investigated with first-principle simulation [6] and experiment [7] , and applied to achieve a record vertical Ga2O3 MOSFETs [8] by M. H. Wong et al; and Z.…”

mentioning

confidence: 99%

Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga₂O₃ metal–oxide–semiconductor capacitors

Zhang

Yuan

Jia

et al. 2019

J. Phys. D: Appl. Phys.

Self Cite

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Electrical properties and trapping characteristics of atomic layer deposited Al-rich HfAlO/β-Ga2O3 capacitor were evaluated via constant-voltage stress (CVS), capacitance-voltage (C-V), and current-voltage (I-V) measurements.The magnitude of the stress-induced charge trapping increases with increasing voltage and time. The effective charges (Neff) including the "border" traps located in near-interface oxide, interface traps (Dit) of HfAlO/β-Ga2O3 interface, and fixed charges contribute significantly to the observed charge trapping, and it is found that interface traps contribute more under large stress bias, compared with "border" traps. In addition, the effective charge density is increased with stress time, implying that the contribution of negative effect defect during CVS process could not be negligible.Measurements of high permittivity (10.74), great interface quality (Dit~1×10 12 eV -1 •cm -2 ), and small gate leakage (1.18×10 -5 A/cm 2 at +10 V) has been extracted, suggesting the great electrical properties of Al-rich HfAlO/β-Ga2O3 MOSCAP. According to the above analysis, Al-rich HfAlO is an attractive candidate for normally off Ga2O3 transistors.

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Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions

Cited by 44 publications

References 40 publications

All-Oxide NiO/Ga₂O₃ p–n Junction for Self-Powered UV Photodetector

All-Oxide NiO/Ga₂O₃ p–n Junction for Self-Powered UV Photodetector

First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3

Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga₂O₃ metal–oxide–semiconductor capacitors

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Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions

Cited by 44 publications

References 40 publications

All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector

All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector

First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3

Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal–oxide–semiconductor capacitors

Contact Info

Product

Resources

About

All-Oxide NiO/Ga₂O₃ p–n Junction for Self-Powered UV Photodetector

All-Oxide NiO/Ga₂O₃ p–n Junction for Self-Powered UV Photodetector

Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga₂O₃ metal–oxide–semiconductor capacitors