Elements of semiconductor-device reliability

Peattie, C.G.; Adams, John; Carrell, S.L.; George, Tont Dan; Valek, M.H.

doi:10.1109/proc.1974.9406

Cited by 21 publications

(5 citation statements)

References 68 publications

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“…51 current overstressing in LEDs, 27 current (or optical power) overstressing in lasers, 50,51 ' 67 and voltage overstressing in photodiodes 68,69 have also been used with success in establishing reliability assurance by eliminating early fail ures. Overstressing using temperature cycling, thermal and mechanical shock, and humidity is well established in the semiconductor industry 8,41 as a means of producing a robust population.…”

Section: Purgementioning

confidence: 99%

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Nash

Joyce

Hartman

et al. 1985

At&T Technical Journal

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We are concerned with assuring the reliability of semiconductor lasers intended for an application in which the design lifetime is long, replacement or redundancy is impossible or impractical, and the failure of even a few lasers could be disastrous. In the search for a reliability assurance strategy that will meet our objectives, we have carefully examined the well-known and widely used bathtub and lognormal approaches. Based upon our understanding of the expected aging behavior of lasers, we propose an alternative reliability assur ance strategy that we believe to be an improvement over the traditional approaches. The object is not how to make reliable lasers, but rather how to confidently predict, in a timely fashion, which lasers in a given population will endure beyond the intended system lifetime. Particular emphasis is placed upon initially imposed overstress regimes that address the anticipated presence of transient modes of degradation and infant failure modes with low thermal activation energies that may be invulnerable to detection during accelerated thermal aging. Since lasers degrade gradually rather than fail suddenly, comparable emphasis is placed upon monitoring the stabilized long-term degradation rates of the survivors of the overstress regimes so as to permit lifetime predictions of individual lasers.

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Section: Purgementioning

confidence: 99%

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Nash

Joyce

Hartman

et al. 1985

At&T Technical Journal

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“…The presence of alkali ions in thermally grown SiO2 can result in device instability (296,130,114,236,173). Also alkali ions are undesirable because they can lead to devitrification of SiO2 (202,224,212) and are a factor in SiO2 dielectric breakdown (346,83,233).…”

Section: Thermally Grown Silicon Dioxidesmentioning

confidence: 99%

“…Various test devices and accelerated testing te,chniques have been developed for evaluating the stability of passivated devices under severe environmental conditions (314,256,238,257). For plastic-encapsulated devices, a moisture-containing ambient constitutes an effective means for accelerating ion migration effects or chemical or galvanic corrosion of the metallization pattern on the chip (182,28,237,33,7,90,256,121,29,238,229,291,236,257,189,23,166,176,177). Moisture is an important factor since surface conductivity of SiO2 and of other passivation materials increases by several orders of magnitud~ with increase in relative humidity (131,46).…”

Section: Device Encapsulationmentioning

confidence: 99%

“…The most reliable silicon devices are those in which device design, wafer processing, metallization, passivation, assembly, encapsulation, and electrical testing are all specified to minimize the incidence of conditions which result in known failure mechanisms, and adequate in-process controls (39) are applied during the entire device fabrication sequence; thus reliability (278,333,281,324,236,239) is designed into the product.…”

Section: Device Encapsulationmentioning

confidence: 99%

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Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

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Passivation coatings are widely used to improve the performance and reliability of silicon devices of various types, ranging from discrete mesa‐type diodes and transistors to complex planar silicon integrated circuits, and including both hermetic and plastic‐encapsulated devices. This paper reviews the materials and techniques used to apply passivation coatings to completed silicon devices. Principal production techniques used in passivation of silicon devices include thermal oxidation, high‐temperature diffusion, high‐temperature chemical vapor deposition of Si3N4 or Al2O3 , low‐temperature chemical vapor deposition of glasslike SiO2 or phosphosilicate layers (deposited at approximately 400°C), rf sputtering of SiO2 , mechanical deposition of glass frit layers which are subsequently fused, and application of organic polymer films.The effects of passivation layers on silicon device reliability are discussed, and the interrelationships among the silicon device, the passivation layer or layers used and the final encapsulation are indicated. Pertinent references on passivation and on related topics are cited in the text.

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“…Faults in VLSl can be divided into two primary categories (Johnson, 1989;Peattie et at., 1974): 1. Those resulting from the manufacturing process such as scratches, dust, or improper packaging of the device.…”

mentioning

confidence: 99%

Faults in Fuzzy Logic Systolic Arrays

Manzoul

1990

Cybernetics and Systems

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Systolic VLSI arrays have been proposed for fast fuzzy inference processes in control systems. Due to their complexity. VLSl circuits sometimes fail and the result is an erroneous output. In this paper, faults in fuzzy logic systolic arrays are considered. It will be shown that a single fault in the array may complement the fuzzy output. Faults in the fuzzy logic systolic array can be tolerated by either hardware redundancy or time redundancy. The recomputing with shifted operands (RESO) method, time redundancy, and the triple modular redundancy (TMR) method, hardware redundancy, are applied to fuzzy logic systolic array.

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Elements of semiconductor-device reliability

Cited by 21 publications

References 68 publications

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Passivation Coatings on Silicon Devices

Faults in Fuzzy Logic Systolic Arrays

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