2014
DOI: 10.1088/1367-2630/16/1/015018
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Elemental vacancy diffusion database from high-throughput first-principles calculations for fcc and hcp structures

Abstract: This work demonstrates how databases of diffusion-related properties can be developed from high-throughput ab initio calculations. The formation and migration energies for vacancies of all adequately stable pure elements in both the face-centered cubic (fcc) and hexagonal close packing (hcp) crystal structures were determined using ab initio calculations. For hcp migration, both the basal plane and z-direction nearest-neighbor vacancy hops were considered. Energy barriers were successfully calculated for 49 el… Show more

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Cited by 73 publications
(33 citation statements)
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“…The authors demonstrated that this method is an efficient automated way to successfully predict small interstitial clusters embedded in bulk materials, with specific examples of cubic SiC, BCC Fe, and BCC Fe-Cr random alloys. This formalism has been released as an open source code called StructOpt [27], which is part of the MAterial Simulation Toolkit (MAST) [28] to help manage the StructOpt workflow (Both StructOpt and MAST are available at https://pypi.python.org/pypi/MAST). Throughout this study MAST and StructOpt were used.…”
Section: Genetic Algorithm: Gs Search Methodsmentioning
confidence: 99%
“…The authors demonstrated that this method is an efficient automated way to successfully predict small interstitial clusters embedded in bulk materials, with specific examples of cubic SiC, BCC Fe, and BCC Fe-Cr random alloys. This formalism has been released as an open source code called StructOpt [27], which is part of the MAterial Simulation Toolkit (MAST) [28] to help manage the StructOpt workflow (Both StructOpt and MAST are available at https://pypi.python.org/pypi/MAST). Throughout this study MAST and StructOpt were used.…”
Section: Genetic Algorithm: Gs Search Methodsmentioning
confidence: 99%
“…Moreover, there is no direct report on atomistic simulation of self-diffusion coefficient in fcc-(Os). Fortunately, there exists one piece of information on the firstprinciples calculation of activation energy for self-diffusion in fcc Os [22]. Thus, based on the first-principles computed activation energy, the frequency prefactor D 0 for self-diffusion in fcc Os can be estimated on the basis of some semi-empirical correlations between activation energy (Q ) and frequency prefactor, as done similarly in our previous work on fcc Pt-Al alloys [23].…”
Section: Semi-empirical Model For Evaluating Self-diffusivities In Mementioning
confidence: 98%
“…Angsten et al [22] computed the activation enthalpy (Q J 527, 833. 6 /mol k = ) for self-diffusion in pure fcc Os by using the first-principles calculation.…”
Section: Diffusion Partmentioning
confidence: 99%
“…NEB is the method of choice to study vacancy and defect diffusion in alloys and metals. [14][15][16] In the materials science a) Z. Rong and D. Kitchaev contributed equally to this work. b) Author to whom correspondence should be addressed.…”
Section: Introductionmentioning
confidence: 99%