Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy

An, Toshu; Yoshimura, Masamichi; Ono, Isamu; Ueda, Kazuyuki

doi:10.1103/physrevb.61.3006

Cited by 121 publications

(113 citation statements)

References 29 publications

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“…1(b), the Si atoms that constitute PPs are resolved. The spacing between the adjacent stripes is approximately 5 nm and the height of each stripe is approximately 0.2 nm, which agree with previously reported results [5].…”

Section: Resultssupporting

confidence: 92%

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One-Dimensional Nanotemplate Structure of a Si(110) Substrate

Yokoyama

Asaoka

Sinsarp

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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The process for the formation of a single-domain one-dimensional nanotemplate with a 16×2 reconstruction was investigated via scanning tunneling microscopy. Si (110) substrates with different resistivities were heated with direction-controlled direct currents. It was determined that obtaining a single-domain 16×2 reconstructed structure for a substrate with a lower resistivity even at the same annealing temperature is time consuming, which indicates that applied voltage rather than current flow plays a dominant role in single-domain formation.

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Section: Resultssupporting

confidence: 92%

“…At the same time, it is also known that Si(110) has a unique one-dimensional (1-D) 16×2 reconstructed structure [4][5][6][7]. The 16×2 reconstructed structure shows alternate stripes of up and down atomic steps that consist of surface adatom units (pairs of pentagons; PPs).…”

Section: Introductionmentioning

confidence: 99%

One-Dimensional Nanotemplate Structure of a Si(110) Substrate

Yokoyama

Asaoka

Sinsarp

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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“…A further protrusion may be identified linking two successive pentagons within the same chain. Pentagons with the same dimensions were already observed on Ge(110)-c(8×10) [25,26] as well as on Ge(110)-(16×2) [25] and on Si(110)-(16×2) [9]. To our knowledge this is the first observation of such pentagons on a surface away from the (110) orientation, indicating their high stability and confirming their fundamental role as an elementary building block in semiconductor surface reconstructions.…”

supporting

confidence: 79%

“…They proposed a six-fold coordinated surface self-interstitial which is captured by a conglomerate of surface atoms [7,8]. This concept was subsequently adapted by An [9] and theoretically analyzed by Stekolnikov [10,11] to explain the pairs of pentagons observed in scanning tunneling microscopy (STM) images of the reconstructed Si(110) surface.…”

mentioning

confidence: 99%

New Structural Model for theSi(331)−(12×1)Surface Reconstruction

Battaglia

Gaál-Nagy²,

Monney

et al. 2009

Phys. Rev. Lett.

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A new structural model for the Si(331)-(12×1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and firstprinciples total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si (110)-(16×2) surface, establishing the pentamer as a universal building block for complex silicon surface reconstructions.The study of semiconductor surface reconstructions has been an area of active research for many years and has gained tremendous importance with the advent of low-dimensional heteroepitaxial semiconductor nanostructures such as quantum dots and quantum wires [1]. The creation of a surface results in broken bonds, called dangling bonds. Dangling bonds are energetically unfavorable causing surface atoms to rearrange or reconstruct. This often results in highly complex atomic structures, whose determination remains a formidable challenge and requires the complementary role of different experimental and theoretical methods. In order to lower the surface energy, silicon surfaces adopt a variety of strategies allowing to reduce the number of dangling bonds. Despite the large number of known surface reconstructions, one frequently encounters common elementary structural building blocks [2,3]. Identifying these building blocks is important not only for a better understanding of these surfaces, but also serves as a guide for the elaboration of new structural models. Two of the most important strategies, encountered for instance on Si(100) [4] and Si(111) [5], are respectively the formation of dimers, where two surface atoms pair up to eliminate their dangling bonds, and the appearance of adatoms, which bond to three surface atoms thus saturating three dangling bonds. An important step towards the understanding of high-index group IV surfaces with a surface normal in between the (111) and (100) direction was the introduction of an additional reconstruction element by Dabrowski et al. [6]. They proposed a six-fold coordinated surface self-interstitial which is captured by a conglomerate of surface atoms [7,8]. This concept was subsequently adapted by An [9] and theoretically analyzed by Stekolnikov [10,11] to explain the pairs of pentagons observed in scanning tunneling microscopy (STM) images of the reconstructed Si(110) surface.In this letter we focus on the atomic structure of the Si(331)-(12×1) reconstruction. We present highresolution STM images resolving for the first time rows of * Electronic address: corsin.battaglia@unine.ch; URL: http://www.unine.ch/phys/spectro 1a)), is an important surface, since it is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). Since the discovery of the Si(331)-(12×1) reconstruction more than 17 years ago [12] several structural models containing dimers and adatoms have been proposed [13,14]. However, none of these models is able to explain the pentagons observed in our STM image...

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“…Using scanning tunneling microscopy (STM) we were able to resolve for the first time rows of pentagon pairs running across the Si(331) surface [15]. Inspired by the adatom-tetramer-interstitial (ATI) model for the Si(110)-(16 × 2) surface [16,17], we proposed a structural model containing silicon pentamers and adatoms as elementary structural building blocks [11,15].…”

Section: Introductionmentioning

confidence: 99%

Valence band structure of the Si(331)-(12 × 1) surface reconstruction

Battaglia¹,

Schwier²,

Monney³

et al. 2011

J. Phys.: Condens. Matter

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Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating semiconducting behavior. An occupied surface state, presumably containing several spectral components, is found centered at −0.6 eV exhibiting a flat energy dispersion. These results are confirmed by scanning tunneling spectroscopy and are consistent with recent first-principles calculations for our structural model.

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Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy

Cited by 121 publications

References 29 publications

One-Dimensional Nanotemplate Structure of a Si(110) Substrate

One-Dimensional Nanotemplate Structure of a Si(110) Substrate

New Structural Model for theSi(331)−(12×1)Surface Reconstruction

Valence band structure of the Si(331)-(12 × 1) surface reconstruction

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