Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films

Abstract

The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiOx was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiOx interface layer thickness.

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

“…11 The predominant peaks in the In 3d 5=2 and Sn 3d 5=2 spectra after the first deposition for 2 s are attributed to elemental In and Sn, following a similar analysis procedure as in our previous work. 12 Pure In is also found after 10 s, while pure Sn is present both after 10 and 940 s. A segregation of tin to the film surface is previously reported by others. 13 The mentioned analysis is performed for the predominant In II and Sn II peaks after 10, 40, and 940 s as well, and these peaks are assigned to In and Sn in crystalline ITO.…”

“…In the previous work, we argued that In components at 444.9 eV and 446.0 eV (energy separation of 1.1 eV) could be attributed to crystalline and amorphous ITO, respectively. 12 By further examination, applying the electroneutrality principle, the presence of amorphous ITO has been excluded. 13 We can confirm this conclusion by analysis of TEM images (Fig.…”

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

“…Peaks of In2 and Sn2 belong to incomplete oxides of Indium and Tin accordingly. The O1 peaks corresponding to the dative bond of Indium and Tin oxides, while, the O2 peak indicates the existence of oxygen vacancy [14][15][16]. After 650 seconds, approaching the ITO interface, O3, In3, Sn3 peaks are beginning to emerge on the XPS spectral of In3d 5/2 , Sn3d 5/2 and O1s with the increase of etching depth.…”

“…are fitting peaks of single-crystal ITO film [14][15][16]. Among them, peaks of In1 and Sn1 are characteristic peaks of In 2 O 3 and SnO compounds correspondingly.…”

Bipolar resistive switching behaviors of ITO nanowire networks

“…In the metal oxides, the double binding energy of O 1s is very common, which corresponds to the two kinds of chemical states of oxygen ions in material surface, oxygen sufficiency and oxygen deficiency. [25][26][27] The double binding energy presents in sample C (Fig. 5(a)), but there is only one binding energy in sample A (Fig.…”