Elektronische Halbleiter

Spenke, Eberhard

doi:10.1007/978-3-642-48244-1

Cited by 80 publications

(18 citation statements)

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“…Si) semiconductors. In order to do so, one has to consider the relationship between momentum and energy as functions of the crystal direction (Spenke 1965, Sze 1985. For indirect semiconductors the momentum of holes at the top of the valence band is different from the momentum of electrons at the bottom of the conduction band.…”

Section: Energy Bandsmentioning

confidence: 99%

“…Basic semiconductor physics is treated in many excellent textbooks (Spenke 1965;Smith 1979;Kittel 1976;Grove 1967;andSze 1981 and, to which the interested reader is referred. For a semiquantitative understanding of detectors a short treatment of the subject is included.…”

Section: Introductionmentioning

confidence: 99%

“…The quantummechanical basis of semiconductor physics will not be dealt with in this text. It can be found in standard literature (see, for example, Spenke 1965 andWang 1989).…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor Radiation Detectors

Lütz

2007

325

239

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Section: Energy Bandsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Semiconductor Radiation Detectors

Lütz

2007

325

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“…The spatial distribution of carriers in the semiconductor follows Boltzmann statistics for the mobile carriers, electrons and holes, as long as their concentration does not approach the range of degfineracy. '1'he occupation of the donor or acceptor states as well as of surface states is described by Fermi statistics, compare, e.g., Hanney (1959), Shockley (1963), Spenke:. (1965).. For ions adsorbed from the electrolyte, or surface groups that react with electrolyte components, again Boltzmanh statistics have to be applied, modified by the restrictions due to a limited number of surface siteso By these basic laws, the correiiations between charge density and electrostatic potential can be derived and compared with experimental data.…”

Section: B Experimental Problems and Special Techniquesmentioning

confidence: 99%

Semiconductor Electrochemistry

Memming¹

2000

217

302

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“…and find the most probable distribution in the known manner [17]. The number of ways in which a distribution of n, electrons in In2+ states and n, electrons in In3+ : e-states can be achieved is taking into account the effect of spin which allows two possibilities for each electron.…”

Section: Appendixmentioning

confidence: 99%

Electrical and Optical Studies of Semiconducting CdF₂:In Crystals

Kunze¹,

Ulrici

1973

Physica Status Solidi (b)

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Optical absorption and electrical conductivity of In-doped CdF, crystals have been measured at various temperatures. The results confirm the assumption of Trautweiler e t al.[12] that the In3+ centers offer two localization possibilities t o the electrons introduced by annealing the crystals in Cd vapour: an atomic ground state (In2+) and a hydrogenic ground state (In3+ :e-). From an analysis of the results 0.055 eV is obtained for the energy distance between the two ground states and approximate values for their positions below the bottom of the conduction band. The latter depend on the degree of conversion. At temperatures below 50 K the occupation ratio between the two ground states can be strongly altered permanently in favour of the In3+ : e-donor states by irradiation with visible or UV light producing a photo-induced conductivity and absorption. From measurements of the dependence of the photo-induced conductivity below 50 K on temperature, irradiation time, and intensity, some properties of the In3+:e-donors are deduced.Die optische Absorption und die elektrische Leitfahigkeit von In-dotierten CdF,-Kristallen wurde bei verschiedenen Temperaturen gemessen. Die Ergebnisse bestiitigen die Annahme von Trautweiler e t al.[12], daB die In3*-Zentren zwei Lokalisierungsmoglichkeiten fur die durch Temperung der Kristalle im Cd-Dampf eingefuhrten Elektronen besitzen: einen ,,Atom"-Grundzustand ( In2+) und einen wasserstoffahnlichen Zustand (In3+ :e-). Aus der Analyse der MeBergebnisse werden fur den Abstand der beiden Grundzustande voneinander 0,055 eV und Naherungswerte fur ihren Abstand vom unteren Rand des Leitungsbandes erhalten. Letztere hangen vom Konversionsgrad ab. Bei Temperaturen unterhalb 50 K kann das Besetzungsverhaltnis zwischen den beiden Grundzustanden zugunsten des In3+ : e-Zustandes durch Bestrahlung mit sichtbarem oder UV Licht dauerhaft stark verandert werden, so daB eine photoinduzierte Leitfahigkeit und Absorption erzeugt wird. -411s Messungen der Abhangigkeit der photoinduzierten Leitfahigkeit unterhalb 50 K von Temperatur, Bestrahlungszeit und -intensitat konnten einige Eigenschaften der In3+ : e--Donatoren ermittelt werden.

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Elektronische Halbleiter

Cited by 80 publications

References 0 publications

Semiconductor Radiation Detectors

Semiconductor Radiation Detectors

Semiconductor Electrochemistry

Electrical and Optical Studies of Semiconducting CdF₂:In Crystals

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Elektronische Halbleiter

Cited by 80 publications

References 0 publications

Semiconductor Radiation Detectors

Semiconductor Radiation Detectors

Semiconductor Electrochemistry

Electrical and Optical Studies of Semiconducting CdF2:In Crystals

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Product

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Electrical and Optical Studies of Semiconducting CdF₂:In Crystals